FEI Completes Installation of First In-Line DA 300HP DualBeam(TM) in Japan

Top-Ten Japanese Supplier of Semiconductor Devices Adopts FEI's In-Fab Defect

Analysis Solution for Rapid Ultra-High STEM, TEM Resolution

Nov 20, 2005, 00:00 ET from FEI

    HILLSBORO, Ore., Nov. 20 /PRNewswire-FirstCall/ -- FEI Company
 (Nasdaq:   FEIC) has completed the first Japanese installation of its advanced
 DA 300HP DualBeam(TM) system for automated in-fab defect analysis extendable
 to the 45nm design node. The in-line system, installed in the customer's 300mm
 line, provides rapid in-fab defect analysis. It also extracts wafer samples
 that can be sent to the lab when rapid ultra-high resolution
 scanning/transmission electron microscopy (STEM) and transmission electron
 microscopy (TEM) analysis is required.
     The DA 300HP will be used in the customer's fab line following e-beam
 wafer inspection to provide critical root cause analysis in a fraction of the
 time required by other techniques. The customer selected the FEI Defect
 Analyzer to obtain rapid ultra-high resolution results while enabling wafers
 to remain in the fab. Once in the lab, samples will be further analyzed using
 an FEI Strata 400 STEM DualBeam or one of the lab's TEMs.  It is a powerful
 solution that delivers better control over advanced processes giving
 semiconductor manufacturers the ability to improve yields, reduce
 time-to-market, and drastically reduce process development costs.
     "As design nodes continue to shrink, manufacturers are clearly
 appreciating the value of utilizing rapid in-fab defect analysis tools and are
 experiencing the need to move to STEM and TEM analysis," commented Vahe
 Sarkissian, FEI's chairman and CEO.  "This important installation in Japan
 underscores the growing need for advanced solutions as many traditional SEM
 techniques are rapidly reaching their outer limits."
     The DA 300HP's software uses programmed recipes for consistent automation
 of repetitive tasks; Automated Defect Redetection (ADR) and Automated Defect
 Cross-Sectioning (ADX) ensure maximum tool use with minimal operator
 intervention, allowing users to focus on identifying what parameters need to
 change to improve process yield.  The advanced Defect Analyzer system is
 engineered to operate in the most demanding fab environments. Cleanroom-
 compatible system construction, S2 safety certification, and optional factory
 automation capabilities make the system an easy tool to integrate into fab
     About FEI
     FEI's Tools for Nanotech(TM), featuring focused ion- and electron-beam
 technologies, deliver 3D characterization, analysis and modification
 capabilities with resolution down to the sub-Angstrom level and provide
 innovative solutions for customers working in NanoResearch, NanoElectronics
 and NanoBiology.  The company's products for NanoElectronics address a robust
 set of both fab- and lab-based applications including 3D metrology and defect
 analysis, mask repair and circuit edit.  With R&D centers in North America and
 Europe, and sales and service operations in more than 40 countries around the
 world, FEI is bringing the nanoscale within the grasp of leading researchers
 and manufacturers and helping to turn some of the biggest ideas of this
 century into reality.  More information can be found on the FEI website at:
 http://www.feicompany.com .