EDEN PRAIRIE, Minn., April 4 /PRNewswire-FirstCall/ -- NVE Corporation (Nasdaq: NVEC) said today that it has been notified by the U.S. Patent and Trademark Office of the expected grant of a patent relating to magnetothermal Magnetoresistive Random Access Memory (MRAM). NVE has been notified that the patent, titled "Magnetic Memory Layers Thermal Pulse Transitions," will be issued today. The patent is number 7,023,723 and is the grant of a patent under the application published by the U.S. Patent and Trademark Office as number 2004-0125673. The grant is in addition to patent number 6,963,098 titled "Thermally Operated Switch Control Memory Cell," which was granted in November 2005, as well as other NVE patents relating to MRAM and magnetothermal MRAM. MRAM is a revolutionary integrated-circuit memory fabricated with nanotechnology that uses electron spin to store data. MRAM has been called the ideal memory because it has the potential to combine the speed of SRAM, the density of DRAM, and the non-volatility of flash memory. Magnetothermal MRAM uses a combination of ultra-fast magnetic fields and heat pulses, both from electrical current, to reduce the energy required to write data and allow reduction of the memory cell size while maintaining thermal stability. Thus magnetothermal MRAM has the potential to enable low power, dense MRAM. "Magnetothermal MRAM could be the MRAM of the future because it promises to reduce both cell size and write current," said NVE President and CEO Daniel A. Baker, Ph.D. "This patent grant strengthens our magnetothermal MRAM intellectual property portfolio." The grant will be NVE's thirty-sixth issued U.S. patent. The company has more than 100 patents worldwide either issued, pending, or licensed from others. Links to the new patent as well as NVE's other U.S. patents can be found at the "About NVE" section of the company's website ( http://www.nve.com ). NVE is a leader in the practical commercialization of spintronics, a nanotechnology that many experts believe represents the next generation of microelectronics. NVE licenses its MRAM intellectual property and sells spintronic sensors and couplers to revolutionize data sensing and transmission. Statements used in this press release that relate to future plans, events, financial results or performance are forward-looking statements that are subject to certain risks and uncertainties including, among others, such factors as uncertainties relating to MRAM production by our licensees, risks in the enforcement of our patents, uncertainties in the rate of adoption of technology, as well as the risk factors listed from time to time in our filings with the SEC, including our Annual Report on Form 10-KSB and other reports filed with the SEC.
SOURCE NVE Corporation