EDEN PRAIRIE, Minn., April 4 /PRNewswire-FirstCall/ -- NVE Corporation
(Nasdaq: NVEC) said today that it has been notified by the U.S. Patent and
Trademark Office of the expected grant of a patent relating to magnetothermal
Magnetoresistive Random Access Memory (MRAM).
NVE has been notified that the patent, titled "Magnetic Memory Layers
Thermal Pulse Transitions," will be issued today. The patent is number
7,023,723 and is the grant of a patent under the application published by the
U.S. Patent and Trademark Office as number 2004-0125673. The grant is in
addition to patent number 6,963,098 titled "Thermally Operated Switch Control
Memory Cell," which was granted in November 2005, as well as other NVE patents
relating to MRAM and magnetothermal MRAM.
MRAM is a revolutionary integrated-circuit memory fabricated with
nanotechnology that uses electron spin to store data. MRAM has been called the
ideal memory because it has the potential to combine the speed of SRAM, the
density of DRAM, and the non-volatility of flash memory.
Magnetothermal MRAM uses a combination of ultra-fast magnetic fields and
heat pulses, both from electrical current, to reduce the energy required to
write data and allow reduction of the memory cell size while maintaining
thermal stability. Thus magnetothermal MRAM has the potential to enable low
power, dense MRAM.
"Magnetothermal MRAM could be the MRAM of the future because it promises
to reduce both cell size and write current," said NVE President and CEO Daniel
A. Baker, Ph.D. "This patent grant strengthens our magnetothermal MRAM
intellectual property portfolio."
The grant will be NVE's thirty-sixth issued U.S. patent. The company has
more than 100 patents worldwide either issued, pending, or licensed from
others. Links to the new patent as well as NVE's other U.S. patents can be
found at the "About NVE" section of the company's website
( http://www.nve.com ).
NVE is a leader in the practical commercialization of spintronics, a
nanotechnology that many experts believe represents the next generation of
microelectronics. NVE licenses its MRAM intellectual property and sells
spintronic sensors and couplers to revolutionize data sensing and
Statements used in this press release that relate to future plans, events,
financial results or performance are forward-looking statements that are
subject to certain risks and uncertainties including, among others, such
factors as uncertainties relating to MRAM production by our licensees, risks
in the enforcement of our patents, uncertainties in the rate of adoption of
technology, as well as the risk factors listed from time to time in our
filings with the SEC, including our Annual Report on Form 10-KSB and other
reports filed with the SEC.
SOURCE NVE Corporation