EDEN PRAIRIE, Minn., Nov. 8 /PRNewswire-FirstCall/ -- NVE Corporation
(Nasdaq: NVEC) said today that it has been notified by the U.S. Patent and
Trademark Office of the expected grant of a key patent for magnetothermal
Magnetoresistive Random Access Memory (MRAM).
NVE has been notified that the patent, titled "Thermally Operated Switch
Control Memory Cell," will be issued today. The patent is number 6,963,098
and is the grant of a patent under the application published by the U.S.
Patent and Trademark Office as number 2005-0002267.
MRAM is a revolutionary integrated-circuit memory fabricated with
nanotechnology that uses electron spin to store data. MRAM has been called
the ideal memory because it has the potential to combine the speed of SRAM,
the density of DRAM, and the non-volatility of flash memory. The market for a
universal memory that combines the speed of SRAM, the density of DRAM and the
nonvolatility of flash could be $76.3 billion by 2019, according to market
research by iSuppli Corporation.
Magnetothermal MRAM uses a combination of tiny magnetic fields and
ultra-fast heating, both from electrical current pulses to reduce the energy
required to write data and reduce the size of memory cells while maintaining
thermal stability. This has the potential to enable low power, dense MRAM.
NVE has two previously announced magnetothermal MRAM development contracts
with Department of Defense agencies, both with a goal of showing the design
feasibility of one-gigabit magnetothermal MRAM chips.
"Magnetothermal MRAM promises to reduce both cell size and write current,
which could help make MRAM a mainstream memory technology," said NVE President
and CEO Daniel A. Baker, Ph.D. "One of the challenges with conventional MRAM
is that as the cells become smaller, the write energy is squeezed into a
smaller area and heat can become a problem. Our team has turned that problem
on its head by using heat -- even waste heat -- to reduce the current and
energy required to write data, much as turbocharging uses waste energy to
improve the efficiency of engines."
The grant will be NVE's 35th issued U.S. patent. The company has more
than 100 patents worldwide either issued, pending, or licensed from others.
Links to the new patent as well as NVE's other U.S. patents can be found at
the "About NVE" section of the company's website ( http://www.nve.com ).
NVE is a leader in the practical commercialization of spintronics, a
nanotechnology that many experts believe represents the next generation of
microelectronics. NVE licenses its MRAM intellectual property and sells
spintronic sensors and couplers to revolutionize data sensing and
Statements used in this press release that relate to future plans, events,
financial results or performance are forward-looking statements that are
subject to certain risks and uncertainties including, among others, such
factors as uncertainties relating to MRAM production by our licensees, risks
in the enforcement of our patents, as well as the risk factors listed from
time to time in our filings with the SEC, including our Annual Report on Form
10-KSB and other reports filed with the SEC.
SOURCE NVE Corporation