NVE Notified of Magnetothermal MRAM Patent Grant

    EDEN PRAIRIE, Minn., Nov. 8 /PRNewswire-FirstCall/ -- NVE Corporation
 (Nasdaq:   NVEC) said today that it has been notified by the U.S. Patent and
 Trademark Office of the expected grant of a key patent for magnetothermal
 Magnetoresistive Random Access Memory (MRAM).
     NVE has been notified that the patent, titled "Thermally Operated Switch
 Control Memory Cell," will be issued today.  The patent is number 6,963,098
 and is the grant of a patent under the application published by the U.S.
 Patent and Trademark Office as number 2005-0002267.
     MRAM is a revolutionary integrated-circuit memory fabricated with
 nanotechnology that uses electron spin to store data.  MRAM has been called
 the ideal memory because it has the potential to combine the speed of SRAM,
 the density of DRAM, and the non-volatility of flash memory.  The market for a
 universal memory that combines the speed of SRAM, the density of DRAM and the
 nonvolatility of flash could be $76.3 billion by 2019, according to market
 research by iSuppli Corporation.
     Magnetothermal MRAM uses a combination of tiny magnetic fields and
 ultra-fast heating, both from electrical current pulses to reduce the energy
 required to write data and reduce the size of memory cells while maintaining
 thermal stability.  This has the potential to enable low power, dense MRAM.
 NVE has two previously announced magnetothermal MRAM development contracts
 with Department of Defense agencies, both with a goal of showing the design
 feasibility of one-gigabit magnetothermal MRAM chips.
     "Magnetothermal MRAM promises to reduce both cell size and write current,
 which could help make MRAM a mainstream memory technology," said NVE President
 and CEO Daniel A. Baker, Ph.D.  "One of the challenges with conventional MRAM
 is that as the cells become smaller, the write energy is squeezed into a
 smaller area and heat can become a problem.  Our team has turned that problem
 on its head by using heat -- even waste heat -- to reduce the current and
 energy required to write data, much as turbocharging uses waste energy to
 improve the efficiency of engines."
     The grant will be NVE's 35th issued U.S. patent.  The company has more
 than 100 patents worldwide either issued, pending, or licensed from others.
 Links to the new patent as well as NVE's other U.S. patents can be found at
 the "About NVE" section of the company's website ( http://www.nve.com ).
     NVE is a leader in the practical commercialization of spintronics, a
 nanotechnology that many experts believe represents the next generation of
 microelectronics.  NVE licenses its MRAM intellectual property and sells
 spintronic sensors and couplers to revolutionize data sensing and
     Statements used in this press release that relate to future plans, events,
 financial results or performance are forward-looking statements that are
 subject to certain risks and uncertainties including, among others, such
 factors as uncertainties relating to MRAM production by our licensees, risks
 in the enforcement of our patents, as well as the risk factors listed from
 time to time in our filings with the SEC, including our Annual Report on Form
 10-KSB and other reports filed with the SEC.

SOURCE NVE Corporation

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