NVE Notified of Patent Grant on Spintronic Structure

    EDEN PRAIRIE, Minn., March 29 /PRNewswire-FirstCall/ -- NVE Corporation
 (Nasdaq:   NVEC) announced that it has been notified by the U. S. Patent and
 Trademark Office that the patent titled "Magnetic Field Sensor with Augmented
 Magnetoresistive Sensing Layer" will be issued today.  The patent relates to
 the use of an effect known as "electron spin exchange-biasing" for
 low-hysteresis spin dependent tunneling (SDT) and giant magnetoresistance
 (GMR) sensors.  The patent is number 6,872,467 and is the grant of the
 application published by the U.S. Patent and Trademark Office under number
 2004-0115478.
     SDT and GMR sensors applications include magnetic disk read heads and
 magnetoresistive random access memory (MRAM).  The invention reduces
 hysteresis, which can cause errors and signal loss.
     "This is an important sensor innovation," said NVE Founder and Chief
 Technology Officer James M. Daughton, Ph.D.  "It enables better linear
 magnetic field sensors and could have wide applications."
     Links to the new patent as well as NVE's other U. S. patents can be found
 at the "company information" section of NVE's website ( http://www.nve.com ).
     NVE is a leader in the practical commercialization of spintronics, a
 nanotechnology that many experts believe represents the next generation of
 microelectronics.  NVE licenses its MRAM intellectual property and sells
 spintronic products, including sensors and couplers, to revolutionize data
 sensing and transmission.
     Statements used in this press release that relate to future plans, events,
 or performance are forward-looking statements that are subject to certain
 risks and uncertainties including, among others, risks in the enforcement of
 our patents as well as the risk factors listed from time to time in our
 filings with the SEC, including our Annual Report on Form 10-KSB and other
 reports filed with the SEC.
 
 

SOURCE NVE Corporation

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