2014

Rohm SCH2080KE - SiC power MOSFET with SiC-SBD

WEST HARTFORD, Conn., April 14, 2014 /PRNewswire-iReach/ -- Global Information Inc. announces the addition of a new market research report "Rohm SCH2080KE - SiC power MOSFET with SiC-SBD" at GIIResearch.com

The SCH2080KE from ROHM Semiconductor is a 2nd generation high-voltage SiC (SiliconCarbide) power MOSFET. With a breakdown voltage of 1200V for a current of 28A (100°C), the SCH2080KE is optimized for solar inverter, induction heating or motor drives applications.

The SCH2080KE 1200V MOSFET offers a very low on-resistance (80mΩ ), a fast switching speed and a fast reverse recovery. TheMOSFET is already integrated in power modules by Danfoss.

System Plus Consulting is publishing the reverse costing report on the SCH2080KE. Based on a complete teardown analysis (power module, mechanical parts, SiC MOSFETs and SiC Diodes), the report provides an estimation of the production cost of SCH2080KE discrete, SiC MOSFET transistor and Schottky Barrier diode.

Table of Contents

  1. Overview / Introduction
  2. Companies Profile
  3. SCH2080KE Characteristics
  4. SCH2080KE Physical Analysis
  5. Manufacturing Process Flow
  6. Cost Analysis
  7. Price EstimationContact

More detailed information is available at
http://www.giiresearch.com/report/spc298653-rohm-sch2080ke-sic-power-mosfet-sic-sbd.html

Media Contact: Joe Malley, Global Information, Inc., 860-674-8796, US-marketing@gii.co.jp

News distributed by PR Newswire iReach: https://ireach.prnewswire.com

SOURCE Global Information, Inc.



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