SAN FRANCISCO, March 7 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC)* today announced the development of NANO FLASH(TM), a new technology for embedded flash microcontrollers that combines the best attributes of a NAND flash cell and a NOR flash peripheral circuit to create high-density embedded memory with ultra-low power consumption. TAEC today launched the first NANO FLASH-based product, a 32-bit single-chip MIPS-based(TM) reduced instruction set computer (RISC) microcontroller (MCU). Designated TMP19A43FDXBG, the new high-performance MCU is ideal for battery-operated digital consumer applications, including single-lens reflex digital still cameras, and is also well-suited for home-appliance applications. Sampling is scheduled to start in October 2005. TAEC will be displaying the TMP19A43FDXBG at the Embedded Systems Conference here this week. "Toshiba NANO FLASH technology represents a significant advancement in embedded memory," said Don Schneider, business development manager of the ASSP Business Unit at TAEC. "With the ultra-low-power NANO FLASH technology, a 4-megabit (Mb) memory accessed at 40 megahertz (MHz) draws only 7 milliamperes (mA), low enough to replace mask read-only memory (ROM) in battery-operated products. The highly integrated Toshiba TMP19A43FDXBG incorporates NANO FLASH memory with full-speed operation at 40MHz along with a number of peripherals, including high-speed 10-bit analog-to-digital (A/D) converters, digital-to-analog (D/A) converters and 16- and 32-bit timers." TMP19A43FDXBG integrates the Toshiba TX19A core with its excellent code efficiency and interrupt responsiveness, 512KB of NANO FLASH memory and 24KB of random-access memory (RAM). Other built-in functionality includes 17 channels of 16-/32-bit timer/counters, 16 channels of high-speed 10-bit A/D converters, 2 channels of 8-bit D/A converters and a 6-channel high-speed serial interface. Main Features * Integrates 512KB NANO FLASH memory and 24KB RAM that enables the control of large programs with a single chip * Small package size enables system miniaturization; housed in a small FBGA package with package dimensions of 12 millimeters (mm) x 12mm, 1.4mm thick * Incorporates a 10-bit A/D converter with 16 input channels with rapid conversion of 1.15 microseconds and an 8-bit D/A converter with 2 output channels for enhanced analog functionality * Provides 16 external interrupt pins and 32 key-on wake up pins that include dynamic pull-up and are operable with the 32kHz sub-clock to reduce power consumption * Offers on-board debugging functionality that can rewrite the embedded flash memory to facilitate system development. Key Specifications of New Microcontroller Part Number TMP19A43FDXBG Embedded Memory 512KB NANO FLASH memory and 24KB RAM Operating Frequency 40MHz Power Supply Voltage Internal: 1.35Volts (V) -1.65V Input/Output: 2.7V - 3.6V A/D converter: 2.7V -3.6V D/A converter: 2.3V -2.7V Built-in Peripheral Functions DMA controller, 16-/32-bit timers, general-purpose serial interface, Serial Bus interface, A/D converters, D/A converters, watch dog timer, key-on wake up, clock timers Package FBGA193 with 0.65-mm pitch Development Background Embedded NOR flash technologies generally require substantially more power than the corresponding mask ROM technology. Since battery life is affected by the current consumption of the device, this power drain prevents effective use of NOR flash technology as a new-product launch vehicle or to replace mask ROM with the NOR flash equivalent in production. To overcome these limitations, Toshiba Corporation developed NANO FLASH technology for flash embedded microcontrollers. NANO FLASH technology uses a NOR architecture with memory cells connected in parallel to bit-lanes to achieve the high-speed random access required for embedded program memory. It employs NAND flash cell technology with Fowler-Nordheim (FN) tunneling for both program and erase to provide very fast program and erase times with ultra-low power consumption. In addition, Toshiba improved the readout circuit and its timing control which diminished DC current dissipation and allowed low-power consumption. Finally, the process was changed from a memory process to a logic process in order to embed the flash memory cells with high-performance CMOS technology. Technical Specifications of Toshiba NANO FLASH Toshiba NANO FLASH Memory Size 4Mb Power supply 1.5V/3.3V (2 power sources) Block Size 1 megabit Standby Current 3 microamperes (typical) Read current 7mA at 40MHz operation, typical Write time 0.3 second/block (typical) Erase time 0.1 second/block (typical) Pricing and Availability Samples of the TMP19A43FDXBG NANO FLASH microcontroller are scheduled to be available in October 2005. Sample pricing of TMP19A43FDXBG will be $11.50 each in 1,000-piece quantities. Mass production is scheduled to begin in January 2006. A mask ROM version, TMP19A43CZXBG, is also in development with sample shipments planned to start in March 2006. Sample pricing of TMP19A43CZXBG is expected to be $7.65 each in 1,000-piece quantities. Mass production is expected to begin in May 2006. *About TAEC Combining quality and flexibility with design engineering expertise, TAEC brings a breadth of advanced, next-generation technologies to its customers. This broad offering includes semiconductors, flash memory-based storage solutions, and displays for the computing, wireless, networking, automotive and digital consumer markets. TAEC is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, one of the five largest semiconductor companies worldwide in terms of global sales for the year 2003 according to Gartner/Dataquest's Worldwide Semiconductor Market Share Ranking. Toshiba is a world leader in high-technology products with more than 300 major subsidiaries and affiliates worldwide. For additional company and product information, please visit TAEC's website at chips.toshiba.com. For technical inquiries, please e-mail Tech.Questions@taec.toshiba.com. Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba's "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at www.chips.toshiba.com, or from your TAEC representative. NANO FLASH is a trademark of Toshiba Corporation. All trademarks and tradenames used herein are the properties of their respective holders.
SOURCE Toshiba America Electronic Components, Inc.