Toshiba Announces Development of NANO FLASH(TM) Technology, Launches First NANO FLASH-Based Embedded Product, a 32-Bit MIPS RISC Microcontroller

Ultra-Low Power Consumption With 40MHz Operation and Built-in Peripherals Make

MCU a Perfect Fit for Battery-Operated Digital Consumer Applications

Mar 07, 2005, 00:00 ET from Toshiba America Electronic Components, Inc.

    SAN FRANCISCO, March 7 /PRNewswire/ -- Toshiba America Electronic
 Components, Inc. (TAEC)* today announced the development of NANO FLASH(TM), a
 new technology for embedded flash microcontrollers that combines the best
 attributes of a NAND flash cell and a NOR flash peripheral circuit to create
 high-density embedded memory with ultra-low power consumption.  TAEC today
 launched the first NANO FLASH-based product, a 32-bit single-chip
 MIPS-based(TM) reduced instruction set computer (RISC) microcontroller (MCU).
 Designated TMP19A43FDXBG, the new high-performance MCU is ideal for
 battery-operated digital consumer applications, including single-lens reflex
 digital still cameras, and is also well-suited for home-appliance
 applications.  Sampling is scheduled to start in October 2005.  TAEC will be
 displaying the TMP19A43FDXBG at the Embedded Systems Conference here this
     "Toshiba NANO FLASH technology represents a significant advancement in
 embedded memory," said Don Schneider, business development manager of the ASSP
 Business Unit at TAEC.  "With the ultra-low-power NANO FLASH technology, a
 4-megabit (Mb) memory accessed at 40 megahertz (MHz) draws only 7 milliamperes
 (mA), low enough to replace mask read-only memory (ROM) in battery-operated
 products.  The highly integrated Toshiba TMP19A43FDXBG incorporates NANO FLASH
 memory with full-speed operation at 40MHz along with a number of peripherals,
 including high-speed 10-bit analog-to-digital (A/D) converters,
 digital-to-analog (D/A) converters and 16- and 32-bit timers."
     TMP19A43FDXBG integrates the Toshiba TX19A core with its excellent code
 efficiency and interrupt responsiveness, 512KB of NANO FLASH memory and 24KB
 of random-access memory (RAM).  Other built-in functionality includes
 17 channels of 16-/32-bit timer/counters, 16 channels of high-speed 10-bit A/D
 converters, 2 channels of 8-bit D/A converters and a 6-channel high-speed
 serial interface.
     Main Features
      *  Integrates 512KB NANO FLASH memory and 24KB RAM that enables the
         control of large programs with a single chip
      *  Small package size enables system miniaturization; housed in a small
         FBGA package with package dimensions of 12 millimeters (mm) x 12mm,
         1.4mm thick
      *  Incorporates a 10-bit A/D converter with 16 input channels with rapid
         conversion of 1.15 microseconds and an 8-bit D/A converter with 2
         output channels for enhanced analog functionality
      *  Provides 16 external interrupt pins and 32 key-on wake up pins that
         include dynamic pull-up and are operable with the 32kHz sub-clock to
         reduce power consumption
      *  Offers on-board debugging functionality that can rewrite the embedded
         flash memory to facilitate system development.
      Key Specifications of New Microcontroller
      Part Number               TMP19A43FDXBG
      Embedded Memory           512KB NANO FLASH memory and 24KB RAM
      Operating Frequency       40MHz
      Power Supply Voltage      Internal: 1.35Volts (V) -1.65V
                                Input/Output: 2.7V - 3.6V
                                A/D converter: 2.7V -3.6V
                                D/A converter: 2.3V -2.7V
      Built-in Peripheral
       Functions                DMA controller, 16-/32-bit timers,
                                general-purpose serial interface, Serial Bus
                                interface, A/D converters, D/A converters,
                                watch dog timer, key-on wake up, clock timers
      Package                   FBGA193 with 0.65-mm pitch
     Development Background
     Embedded NOR flash technologies generally require substantially more power
 than the corresponding mask ROM technology.  Since battery life is affected by
 the current consumption of the device, this power drain prevents effective use
 of NOR flash technology as a new-product launch vehicle or to replace mask ROM
 with the NOR flash equivalent in production.  To overcome these limitations,
 Toshiba Corporation developed NANO FLASH technology for flash embedded
     NANO FLASH technology uses a NOR architecture with memory cells connected
 in parallel to bit-lanes to achieve the high-speed random access required for
 embedded program memory.  It employs NAND flash cell technology with
 Fowler-Nordheim (FN) tunneling for both program and erase to provide very fast
 program and erase times with ultra-low power consumption.  In addition,
 Toshiba improved the readout circuit and its timing control which diminished
 DC current dissipation and allowed low-power consumption.  Finally, the
 process was changed from a memory process to a logic process in order to embed
 the flash memory cells with high-performance CMOS technology.
      Technical Specifications of Toshiba NANO FLASH
                                   Toshiba NANO FLASH
      Memory Size                  4Mb
      Power supply                 1.5V/3.3V (2 power sources)
      Block Size                   1 megabit
      Standby Current              3 microamperes (typical)
      Read current                 7mA at 40MHz operation, typical
      Write time                   0.3 second/block (typical)
      Erase time                   0.1 second/block (typical)
     Pricing and Availability
     Samples of the TMP19A43FDXBG NANO FLASH microcontroller are scheduled to
 be available in October 2005.  Sample pricing of TMP19A43FDXBG will be $11.50
 each in 1,000-piece quantities.  Mass production is scheduled to begin in
 January 2006.
     A mask ROM version, TMP19A43CZXBG, is also in development with sample
 shipments planned to start in March 2006.  Sample pricing of TMP19A43CZXBG is
 expected to be $7.65 each in 1,000-piece quantities.  Mass production is
 expected to begin in May 2006.
     *About TAEC
     Combining quality and flexibility with design engineering expertise, TAEC
 brings a breadth of advanced, next-generation technologies to its customers.
 This broad offering includes semiconductors, flash memory-based storage
 solutions, and displays for the computing, wireless, networking, automotive
 and digital consumer markets.
     TAEC is an independent operating company owned by Toshiba America, Inc., a
 subsidiary of Toshiba Corporation, one of the five largest semiconductor
 companies worldwide in terms of global sales for the year 2003 according to
 Gartner/Dataquest's Worldwide Semiconductor Market Share Ranking.  Toshiba is
 a world leader in high-technology products with more than 300 major
 subsidiaries and affiliates worldwide.  For additional company and product
 information, please visit TAEC's website at  For technical
 inquiries, please e-mail
     Information in this press release, including product pricing and
 specifications, content of services and contact information, is current and
 believed to be accurate on the date of the announcement, but is subject to
 change without prior notice.  Technical and application information contained
 here is subject to the most recent applicable Toshiba product specifications.
 In developing designs, please ensure that Toshiba products are used within
 specified operating ranges as set forth in the most recent Toshiba product
 specifications and the information set forth in Toshiba's "Handling Guide for
 Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook."  This
 information is available at, or from your TAEC
     NANO FLASH is a trademark of Toshiba Corporation.  All trademarks and
 tradenames used herein are the properties of their respective holders.

SOURCE Toshiba America Electronic Components, Inc.