"These low loss GaN devices are setting new industry standards for performance and are based on the VisIC ALL Switch second generation HEMT technology, which combines high levels of cell integration with optimized cell design," said Gregory Bunin, CTO, VisIC. "This technology supports reduced gate charge and capacitances without losing the benefits of low RDS(ON), with our GaNs offering an ultra-low maximum switching energy down to 140 μJ."
Switching losses are three to five times lower compared to SIC MOSFETs counterparts. Isolated Gate Driver is integrated in an isolated DIP power package.
These GaN devices represent high-voltage supplements to VisIC's existing ALL Switch line-up of 650V GaN devices and supplied to selected customers.
The new GaN devices, along with other VisIC solutions will be on display and available for demo at the IEEE Energy Conversion Congress and Exposition (ECCE2016), being held in Milwaukie from Sept. 18-22, www.ieee-ecce.org.
About VisIC Technologies
Based in Nes Ziona, Israel, VisIC Technologies, Ltd. was established in 2010 by experts in Gallium Nitride (GaN) technology to develop and sell advanced GaN-based power conversion products. VisIC has successfully developed, and is bringing to market, high power GaN-based transistors and modules. (GaN is expected to replace most of the Silicon-based (Si) products currently used in power conversion systems.) VisIC has been granted keystone patents for GaN technology and has additional patents pending. For more information, please visit: www.visic-tech.com.
To view the original version on PR Newswire, visit:http://www.prnewswire.com/news-releases/visic-technologies-launches-new-1200-voltage-gan-devices-family-for-efficient-high-speed-switching-with-integral-iso-driver-300329753.html
SOURCE VisIC Technologies