Cree, Inc. Announces Introduction and Availability of 3 Inch 4H SiC Wafers

Demonstrates 3-inch Semi-Insulating Product



Apr 16, 2001, 01:00 ET from Cree, Inc.

    DURHAM, N.C., April 16 /PRNewswire/ -- Cree, Inc. (Nasdaq: CREE) today
 introduced a new 3-inch diameter, n-type, 4H silicon carbide (SiC) wafer
 available for immediate sale.  This new product offering complements Cree's
 previously released 3-inch diameter, n-type, 6H SiC material, introduced in
 October 1999 to meet the needs of high volume optoelectronics customers.
     Cree also announced today the demonstration of a 3-inch diameter semi-
 insulating 4H SiC substrate.  Larger semi-insulating SiC substrates will allow
 for cost-effective scaling of RF and microwave products for commercial
 production.
     Cree is the world's only known manufacturer with commercially available
 single crystal 3-inch SiC substrates.  Three-inch wafers more than double the
 available device area per wafer over existing 2-inch technology, and are
 expected to significantly reduce the cost of devices made from SiC.
     Dr. Robert Glass, Cree Materials Business VP and General Manager,
 commented, "The addition of n-type 4H to our 3-inch product family and the
 demonstration of 3-inch semi-insulating wafer capability results from Cree's
 commitment to converting world class research into products which respond to
 the needs of the commercial market."
     North Carolina-based Cree, Inc. develops and manufactures semiconductor
 materials and devices based on silicon carbide (SiC), gallium nitride (GaN)
 and related compounds.  The company's products include blue and green LEDs, RF
 power transistors for use in wireless infrastructure applications, SiC
 crystals used in the production of unique gemstones and SiC wafers sold for
 use in research and development.  Cree has new product initiatives based on
 its experience in SiC and GaN-based semiconductors, including blue laser
 diodes for optical storage applications, high frequency microwave devices for
 radar and other communications systems, and power devices for power
 conditioning and switching.  For more information on Cree, visit
 http://www.cree.com.
 
     This press release contains forward-looking statements that are subject to
 numerous risks and uncertainties that may cause actual results to differ
 materially from those indicated.  Actual results may differ materially due to
 a number of factors, including uncertain product demand; the possibility we
 will not be able to manufacture the products with sufficiently low cost to
 maintain acceptable margins; uncertainty whether we can increase production
 quickly enough to meet delivery commitments; risks associated with the
 commercial release of new products under development, including the
 possibility we will be unable to develop and manufacture commercially viable
 versions of such products; and other factors discussed in our filings with the
 Securities and Exchange Commission, including our report on Form 10-K for the
 year ended June 25, 2000 and subsequent reports filed with the Commission.
 
 

SOURCE Cree, Inc.
    DURHAM, N.C., April 16 /PRNewswire/ -- Cree, Inc. (Nasdaq: CREE) today
 introduced a new 3-inch diameter, n-type, 4H silicon carbide (SiC) wafer
 available for immediate sale.  This new product offering complements Cree's
 previously released 3-inch diameter, n-type, 6H SiC material, introduced in
 October 1999 to meet the needs of high volume optoelectronics customers.
     Cree also announced today the demonstration of a 3-inch diameter semi-
 insulating 4H SiC substrate.  Larger semi-insulating SiC substrates will allow
 for cost-effective scaling of RF and microwave products for commercial
 production.
     Cree is the world's only known manufacturer with commercially available
 single crystal 3-inch SiC substrates.  Three-inch wafers more than double the
 available device area per wafer over existing 2-inch technology, and are
 expected to significantly reduce the cost of devices made from SiC.
     Dr. Robert Glass, Cree Materials Business VP and General Manager,
 commented, "The addition of n-type 4H to our 3-inch product family and the
 demonstration of 3-inch semi-insulating wafer capability results from Cree's
 commitment to converting world class research into products which respond to
 the needs of the commercial market."
     North Carolina-based Cree, Inc. develops and manufactures semiconductor
 materials and devices based on silicon carbide (SiC), gallium nitride (GaN)
 and related compounds.  The company's products include blue and green LEDs, RF
 power transistors for use in wireless infrastructure applications, SiC
 crystals used in the production of unique gemstones and SiC wafers sold for
 use in research and development.  Cree has new product initiatives based on
 its experience in SiC and GaN-based semiconductors, including blue laser
 diodes for optical storage applications, high frequency microwave devices for
 radar and other communications systems, and power devices for power
 conditioning and switching.  For more information on Cree, visit
 http://www.cree.com.
 
     This press release contains forward-looking statements that are subject to
 numerous risks and uncertainties that may cause actual results to differ
 materially from those indicated.  Actual results may differ materially due to
 a number of factors, including uncertain product demand; the possibility we
 will not be able to manufacture the products with sufficiently low cost to
 maintain acceptable margins; uncertainty whether we can increase production
 quickly enough to meet delivery commitments; risks associated with the
 commercial release of new products under development, including the
 possibility we will be unable to develop and manufacture commercially viable
 versions of such products; and other factors discussed in our filings with the
 Securities and Exchange Commission, including our report on Form 10-K for the
 year ended June 25, 2000 and subsequent reports filed with the Commission.
 
 SOURCE  Cree, Inc.