Hynix Semiconductor Extends Penetration of Graphics Market With Volume Production of New 4 Meg x 16 DDR SDRAM Device

Fifth-Generation DDR Device Operates at 200 MHz, 233 MHz, 250 MHz and 275 MHz

With a 2.5-Volt Power Supply



Apr 23, 2001, 01:00 ET from Hynix Semiconductor Inc.

    SAN JOSE, Calif., April 23 /PRNewswire Interactive Press Release/ --
 Hynix Semiconductor Inc. today announced that it has commenced volume
 production of its latest DRAM device, the 4 Meg x 16 double data rate (DDR)
 synchronous DRAM (SDRAM), solidifying the company's DDR technology lead and
 extending its presence in the fast-growing graphics market. Following closely
 on the heels of the company's 0.22-micron, 166 MHz and 183 MHz 2 Meg x 32 DDR
 devices announced last August, the new DDR device is targeted to meet the
 needs of graphics and consumer applications.
     Commenting on the new DRAM device and Hynix's commitment to supporting DDR
 technology, Farhad Tabrizi, vice president of worldwide memory marketing at
 Hynix Semiconductor Inc., said, "With graphics representing about 20 percent
 of our overall DRAM business, we will continue to place a high priority on
 this area, as well as on other point-to-point applications. Placing greater
 emphasis on these burgeoning markets has allowed us to significantly broaden
 our DRAM customer base and has proven to be a profitable strategy for Hynix."
     Manufactured on Hynix's cost-effective 0.18-micron process technology, the
 new 64 Meg device features a 2.5-volt power supply, and is ideally suited for
 high-performance graphics applications. Operating at 200, 233, 250, and
 275 MHz, the device lays the groundwork for a direct migration path to the
 8 Meg x 16 DDR SDRAM device, which the company will offer in the same thin
 small outline package (TSOP) II as the 4 Meg x 16 device. The new
 4 Meg x 16 DDR SDRAM is available in sample quantities at a price of $10.00.
 Pricing in volume quantities is $5.00.
     Hynix's broad portfolio of quality DRAM products offers the bandwidth and
 granularity features that allow customers to meet stringent time-to-market
 demands. Having sustained a series of major DDR design wins with top-tier
 vendors in both graphics and PC market segments, the company is aggressively
 pursuing other DDR applications in main memory for PC workstations, desktops
 and servers, and expects to introduce a DDR product every six months. In
 high-end network designs, the new 4 Meg x 16 DDR SDRAM is scheduled to be used
 in next-generation WAN and LAN Internet routers and switches, moving from OC48
 to OC192. The number of ports in these designs is doubling, thus increasing
 bandwidth and DRAM megabyte requirements. Consequently, x16 and x32 DDR SDRAMs
 at 200 MHz and 250 MHz are becoming the memory of choice for cache and packet
 storage, while network main memory is utilizing 166 MHz DDR in dual in-line
 memory modules (DIMMs).
 
     About Hynix Semiconductor Inc.
     Hynix Semiconductor Inc. (HSI) of Ichon, Korea, is an industry leader in
 the development, sales, marketing and distribution of high-quality
 semiconductors (including DRAM, SRAM, Flash memory and system IC devices),
 telecommunications and liquid crystal displays.  The Semiconductor Group of
 Hynix Semiconductor is the world's largest DRAM supplier with
 11 semiconductor-manufacturing facilities worldwide, and production capacity
 of over 300,000 wafer starts per month. In addition, Hynix is expanding its
 system IC business unit with leading technology and added deep-submicron
 foundry services to strategically broaden its overall semiconductor presence
 and achieve its goal of leading the global semiconductor market. Based in
 Korea, Hynix maintains development, manufacturing, sales and marketing
 facilities strategically located worldwide. Hynix Semiconductor America (HSA)
 is a U.S. subsidiary of Hynix Semiconductor Inc. HSA is headquartered at
 3101 North First Street, San Jose, Calif., 95134. More information on Hynix
 Semiconductor America and its products is available from the company's web
 site at http://www.hea.com .
 
                      MAKE YOUR OPINION COUNT - Click Here
                http://tbutton.prnewswire.com/prn/11690X01892544
 
 

SOURCE Hynix Semiconductor Inc.
    SAN JOSE, Calif., April 23 /PRNewswire Interactive Press Release/ --
 Hynix Semiconductor Inc. today announced that it has commenced volume
 production of its latest DRAM device, the 4 Meg x 16 double data rate (DDR)
 synchronous DRAM (SDRAM), solidifying the company's DDR technology lead and
 extending its presence in the fast-growing graphics market. Following closely
 on the heels of the company's 0.22-micron, 166 MHz and 183 MHz 2 Meg x 32 DDR
 devices announced last August, the new DDR device is targeted to meet the
 needs of graphics and consumer applications.
     Commenting on the new DRAM device and Hynix's commitment to supporting DDR
 technology, Farhad Tabrizi, vice president of worldwide memory marketing at
 Hynix Semiconductor Inc., said, "With graphics representing about 20 percent
 of our overall DRAM business, we will continue to place a high priority on
 this area, as well as on other point-to-point applications. Placing greater
 emphasis on these burgeoning markets has allowed us to significantly broaden
 our DRAM customer base and has proven to be a profitable strategy for Hynix."
     Manufactured on Hynix's cost-effective 0.18-micron process technology, the
 new 64 Meg device features a 2.5-volt power supply, and is ideally suited for
 high-performance graphics applications. Operating at 200, 233, 250, and
 275 MHz, the device lays the groundwork for a direct migration path to the
 8 Meg x 16 DDR SDRAM device, which the company will offer in the same thin
 small outline package (TSOP) II as the 4 Meg x 16 device. The new
 4 Meg x 16 DDR SDRAM is available in sample quantities at a price of $10.00.
 Pricing in volume quantities is $5.00.
     Hynix's broad portfolio of quality DRAM products offers the bandwidth and
 granularity features that allow customers to meet stringent time-to-market
 demands. Having sustained a series of major DDR design wins with top-tier
 vendors in both graphics and PC market segments, the company is aggressively
 pursuing other DDR applications in main memory for PC workstations, desktops
 and servers, and expects to introduce a DDR product every six months. In
 high-end network designs, the new 4 Meg x 16 DDR SDRAM is scheduled to be used
 in next-generation WAN and LAN Internet routers and switches, moving from OC48
 to OC192. The number of ports in these designs is doubling, thus increasing
 bandwidth and DRAM megabyte requirements. Consequently, x16 and x32 DDR SDRAMs
 at 200 MHz and 250 MHz are becoming the memory of choice for cache and packet
 storage, while network main memory is utilizing 166 MHz DDR in dual in-line
 memory modules (DIMMs).
 
     About Hynix Semiconductor Inc.
     Hynix Semiconductor Inc. (HSI) of Ichon, Korea, is an industry leader in
 the development, sales, marketing and distribution of high-quality
 semiconductors (including DRAM, SRAM, Flash memory and system IC devices),
 telecommunications and liquid crystal displays.  The Semiconductor Group of
 Hynix Semiconductor is the world's largest DRAM supplier with
 11 semiconductor-manufacturing facilities worldwide, and production capacity
 of over 300,000 wafer starts per month. In addition, Hynix is expanding its
 system IC business unit with leading technology and added deep-submicron
 foundry services to strategically broaden its overall semiconductor presence
 and achieve its goal of leading the global semiconductor market. Based in
 Korea, Hynix maintains development, manufacturing, sales and marketing
 facilities strategically located worldwide. Hynix Semiconductor America (HSA)
 is a U.S. subsidiary of Hynix Semiconductor Inc. HSA is headquartered at
 3101 North First Street, San Jose, Calif., 95134. More information on Hynix
 Semiconductor America and its products is available from the company's web
 site at http://www.hea.com .
 
                      MAKE YOUR OPINION COUNT - Click Here
                http://tbutton.prnewswire.com/prn/11690X01892544
 
 SOURCE  Hynix Semiconductor Inc.