Experts Invited to Asia-Pacific Conference on Silicon Carbide and Related Materials (GaN, AlN, BN, Ga2O3, ZnO, diamonds, etc.)

Name

Report Title

1

Manabu ARAI (New JRC, Japan)

Comprehensive Review of Widebandgap Semiconductor Devices

2

Hsien-Chin CHIU (Chang Gung University, Taiwan)

Package and Module Development of Six-inch Silicon-based GaN Power and Microwave Devices

3

Andy CHUANG (Episil Technologies Inc., Taiwan)

SiC Foundry Introduction from Episil

4

Yasuto HIJIKATA (Saitama University, Japan)

A Macroscopic Simulation of the SiC Thermal Oxidation Process based on the Si and C Emission Model

5

Noriyuki IWAMURO (University of Tsukuba, Japan)

Recent progress of SiC MOSFET Devices

6

Guoyou LIU (Zhuzhou CRRC Times Electric Co.,Ltd., China)

The Application Prospect of SiC Devices in Rail Transit

7

Hideharu MATSUURA (Osaka Electro-Communication University, Japan)

Electrical Characterizationof Wide Band-Gap Semiconductors Using Hall-effect Measurements

8

Tokuyasu MIZUHARA (ROHM Semiconductor (Shanghai) Co., Ltd., Japan)

Market Applications of Power Devices (SiC) ~ Characteristics and Applications of SiC Power Devices

9

Yufeng QIU (Global Energy Internet Institute, China)

The Application of SiC Devices into Future Power Grid

10

Guosheng SUN（Dongguan Tianyu Semiconductor Technology Co. Ltd., Institute of Semiconductors, CAS, China）

Review of Structures and Origins of Triangular-shaped Defects in 4H-SiC

11

Xuhui WEN（Institute of Electrical Engineering, CAS, China）

Technical Approaches towards Ultra-high Power Density SiC Inverter in Electric Vehicle Applications

12

Q. Jon ZHANG （North Carolina State University, USA）

Current Status and Future Perspectives of Wide Bandgap Semiconductor Devices and Applications