NoMIS Power Unveils Major Advancement in Next-Gen SiC Planar MOSFETs

ALBANY, N.Y., May 1, 2025 /PRNewswire/ -- NoMIS Power has announced a key advancement in its next-generation 1.2 kV planar SiC MOSFET platform, achieving substantial reductions in on-resistance by optimizing device design and process steps — making it easier than ever to drop SiC into legacy systems or push the boundaries of new power converter designs.

In less than 8 months since its last product release, NoMIS Power has delivered a significant performance leap in its 1.2 kV planar SiC MOSFETs achieving a specific on-resistance (R_on,sp) of 2.5 mΩ-cm² at room temperature with a gate oxide thickness of 50 nm. The combination of low R_on,sp and a thicker-than-industry-standard gate oxide enables NoMIS' next-generation devices to support higher-frequency switching with reduced input capacitance and enhanced reliability margins, due to the lower electric field stress on the gate oxide.

While these new SiC MOSFETs deliver up to a 20% reduction in R_on,sp compared to the previous generation, they are fabricated using the same underlying process baseline. The result is a direct performance upgrade that empowers system designers to extract more efficiency and power density from existing footprints.

NoMIS Power's breakthrough also allows engineers to operate gate drivers at either +18 V or +20 V gate-to-source voltage (V_gs) with near-identical performance — eliminating the penalty associated with lower V_gs operation (Figure 1). As a result, NoMIS SiC MOSFETs remove the need for gate driver redesign in existing applications, simplifying integration into legacy power electronics platforms while accelerating the transition to SiC.

"These new planar SiC MOSFETs push us further ahead of the curve," said Dr. Seung Yup Jang, VP Head of SiC Device Development at NoMIS Power. "We're not just improving benchmarks—we're removing barriers to SiC adoption by giving system designers more flexibility, better performance, and greater confidence."

The result is a new generation of NoMIS SiC MOSFETs that stands shoulder-to-shoulder with top-tier global offerings—delivering world-class performance and reliability while enabling simplified system upgrades.

This breakthrough will be showcased alongside NoMIS Power's high-voltage SiC capabilities and custom design services at PCIM Europe 2025 in Nuremberg, Germany, May 6–8, Hall 4, Booth 131.

About NoMIS Power
NoMIS Power designs and develops novel power semiconductor devices and power packaging architectures to enable innovative power semiconductor and power packaging solutions for the global power electronics markets. Established in 2020, NoMIS Power is a spinout of the University at Albany's College of Nanotechnology, Science, and Engineering.

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SOURCE NoMIS Power Corporation