DUBLIN, Nov 5, 2018 /PRNewswire/ --
The "1200V Silicon IGBT vs SiC MOSFET Comparison 2018 Complete Teardown Report" report has been added to ResearchAndMarkets.com's offering.
In this report, the publisher presents an overview of the state of the art of 1200V Si IGBTs and SiC MOSFETs. We highlight the differences in design and manufacturing processes, and their impact on device size and production cost.
Silicon (Si)-based IGBTs have been on the market for more than 30 years. The technology has quickly evolved, reducing the costs and improving performance at the same time. As Si devices approach their physical limits, wide-band-gap devices, in particular made from silicon carbide (SiC), have emerged on the market, offering better performance thanks to their intrinsic properties.
SiC MOSFETs and Si IGBTs are in competition in various applications in the 1200V range. As of 2018, the SiC MOSFET market is still small compared to that for Si IGBTs due to lack of maturity and high cost. However, market acceptance is increasing as the technology improves, costs fall and more device manufacturers enter the market.
We have analysed different Si and SiC devices from Infineon, STMicro-electronics, Fuji, ON Semiconductor, Mitsubishi, Rohm, Wolfspeed and Littelfuse. The report includes detailed optical and Scanning Electron Microscope pictures of the transistor design, cross sections and epitaxy.
This report provides design information, an estimated production cost for every transistor and compares the different components available on the market.
Key Topics Covered:
1. Overview/Introduction
- Executive Summary
- Reverse Costing Methodology
2. Technology and Market
3. Company Profile
4. Physical Analysis
- 1200V Si IGBT
- Infineon
- IHW40N120R3
- IGC99T120T8RL
- AUIRG4PH50S
- IRG7PH46UD-EP
- STMicroelectronics
- STP16N65M5
- STGWA40S120DF3
- Fuji
- FGW40N120HD
- Littelfuse
- IXGP30N120B3
- IXGK120N120A3
- IXDN75N120
- Mitsubishi
- CM450DY-24S
- ONSemiconductors
- FGH40N120ANTU
- NGTB25N120FL2WAG
- 1200V SiC MOSFET
- Wolfspeed
- CMF20120
- C2M0080120D
- C2M0025120D
- Rohm
- SCH2080KE
- BSM180D12P3C007
- STMicroelectronics
- SCT30N120
- Littelfuse
- LSIC1MO120E0080
- Infineon
- DF11MR12W1M1_B11
5. Transistor Manufacturing Process
6. Cost and Price Analysis
- Summary of the Cost Analysis
- Yields Explanation and Hypotheses
- 1200V Si IGBT
- 1200V SiC MOSFE
For more information about this report visit https://www.researchandmarkets.com/research/5pbwf7/1200v_silicon?w=5
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