MORRISVILLE, N.C., July 28, 2015 /PRNewswire/ -- HexaTech Inc. announced today that it has received a continuation of funding under the U.S. Department of Energy's Advanced Research Projects Agency (ARPA-E) development program. The cost-share extension is valued at $1.2 million over 1 year, and follows $2.8 million over 2 years when the contract was initiated in 2012.
ARPA-E is an innovative and collaborative government agency that catalyzes transformational energy technologies through funding, technical assistance, and market readiness to accelerate the pace of energy innovation.
The HexaTech contract focuses on the development of high power semiconductor switching devices based on Aluminum Nitride (AlN) to more efficiently control the flow of electricity across high-voltage electrical lines. AlN-based devices should exceed the capabilities of currently used materials, enabling smaller, more reliable components. The further implementation of these components could decrease the cost of electricity transmission while increasing overall grid security and reliability.
HexaTech CEO John Goehrke noted, "This contract extension will allow us to further expand our market leadership in high power AlN device development. Combined with ARPA-E's unique Tech-To-Market concept, we anticipate not only raising the bar in device performance, but also raising awareness for AlN in general, which will in turn be a significant growth opportunity for our core substrate business."
"This continued support from ARPA-E will allow us to demonstrate the potential of AlN for high voltage devices by optimizing MOCVD growth parameters, as well as fabricating and testing commercially-oriented components", commented Dr. Baxter Moody, Principal Investigator for the program at HexaTech. He added "HexaTech's world-leading, high quality bulk AlN substrates are the ideal foundation for supporting these designs, and will be essential to maximize high power semiconductor device performance in the future."
HexaTech is an industry-leading manufacturer of single crystal Aluminum Nitride (AlN) substrates. This substrate material will enable long life UV-C light emitting diodes (LEDs) for disinfection applications, deep UV lasers for biological threat detection, and high voltage power semiconductors for smart grid and efficient power conversion.
HexaTech's current product lines include single crystal and polycrystalline AlN substrates. Long life UV-C LEDs and high voltage power devices based on AlN substrates are also in development.
Founded in 2001 with a team of industry experts in III-nitride semiconductors, the team has successfully solved complex material science and engineering challenges to commercialize high quality bulk AlN for volume production. For additional company and product information, please visit us at www.hexatechinc.com.
Contact: Greg Mills
+1 919 415 1495
SOURCE HexaTech Inc.