NEW YORK, June 5, 2012 /PRNewswire/ -- Reportlinker.com announces that a new market research report is available in its catalogue:
III-V Epitaxy Equipment & Applications Market
http://www.reportlinker.com/p0874334/III-V-Epitaxy-Equipment--Applications-Market.html#utm_source=prnewswire&utm_medium=pr&utm_campaign=Electric_power_energy
Anticipating the next investment cycle after the dip
A US$6.1 billion opportunity through the end of the decade
MOCVD and MBE represent essentially 100% of the epitaxial tools used in the commercial production of the devices covered in this report. The corresponding combined revenue opportunity for MBE + MOCVD is estimated to be around US$6.1 billion for the 2012-2020 periods.
LED is by far the single largest application for MOCVD. In 2010 and 2011, the MOCVD market experienced the largest investment cycle in its history driven by a combination of:
-Demand for LED backlit LCD TV
-Subsidies by the Chinese central and local governments
-Anticipation for the general lighting market.
This has put the market into a significant overcapacity situation that could take 12-18 months to absorb. The next investment cycle driven by lighting applications and expected to start in 2013 will be more limited than the previous cycle due to improvements in equipment throughput and yields. Following this cycle, further Cost of Ownership (COO) improvements offered by the next generation of MOCVD reactors should justify the replacement of 2-generation-old reactors installed during the 2010-2011 boom and drive a last small equipment cycle in the second half of the decade. By then, Power GaN will also represent a substantial upside for reactor makers.
Overall MBE use is heavily driven by R&D systems (>50% of the total market) and laser applications (telecom, industrial, medical, research) that are not covered in this report.
For the applications covered in this report, the MBE market will be essentially driven by the continuous growth in the cell phone and wireless applications that are making heavy use of GaAs based RF components. Emerging applications like smart grid and the trend toward increasing connectivity and "intelligence" incorporated in many consumer products will provide further opportunities. However, alternative technologies (Si CMOS, LDMOS, SoS, HR SOI etc…) represent a potential threat and could capture shares of the GaAs RF market and reduce the opportunity for MBE. In addition, MOCVD is making progress in HEMT manufacturing. HCPV however could provide a small potential upside for MBE makers.
The report is also covering the trends in reduction of Cost of Ownership (COO) of MOCVD & MBE. The major technical & R&D trends are analyzed to highlight possible business impacts.Quantifications are provided for each application markets in term of devices, wafer start and equipment's.
Report Features:
This report covers established and emerging epitaxy technology for III-V semiconductors used in the following applications:
-High Brightness LED (GaN and InGaAlP based)
-RF GaAs devices
-Power GaN devices
-High concentrated Photovoltaic (HCPV)
The report provides a comprehensive company profile of the main players in MOCVD and MBE business.
MOCVD and MBE equipment market are duopolies but many emerging players could change the landscape:
Aixtron and Veeco are leading in MOCVD, together representing 96% of the market in 2011. Production MOCVD are complex systems. Design and optimization require expertise in multiple fields including flow dynamics, thermodynamics, chemistry, mechanical and electrical engineering. Technological barriers to entry are fairly high. More than 15 emerging players have been identified but so far have been struggling to capture any sizeable share of the market. But the pressure is mounting and established MOCVD makers will need to maintain that technology gap to keep emerging competitors at bay. The main battlefield is that of total cost of ownership. Established MOCVD makers all have technology roadmaps to enable COO reduction of 3X - 4X within the next 5 years through a combination of improved yields, throughputs and precursor utilization efficiency.
For MBE, Riber and Veeco are the only 2 players offering large capacity / large throughput MBE production tools for volume manufacturing. We expect they will maintain this dominant position. However, there are about 10 other MBE manufacturers offering R&D or pilot production systems that also have a strong presence on the general MBE market (DCA, SVT, Eiko…).
The report includes a very detailed analysis of all technology trends and key cost drivers.
Potential overcapacity in MO precursor supply:
The Metal Organic precursor market will also be essentially driven by LED applications. But MOCVD reactor technology improvements (yield, consumption, wafer size…) will lower the amount of TMGa and TMIn needed per cm² of epiwafer.
The 2010 metal organic shortage ended mid 2011 thanks to aggressive capacity expansion by leading suppliers. Further capacity expansion plans from established and emerging suppliers could come online within the next 3 years. If executed as announced, we expect significant oversupply starting from 2012 that could continue through 2016 and beyond. This situation could put pressure on prices. Further MO synthesis technology improvements could provide opportunity for cost reductions. However, the usually volatile prices of raw Indium and Gallium also have a significant impact on cost.
The report provides Metal Organic precursor price, volume & revenue trends.
Company Listing:
Acco, Addon, Aixtron, Akzo Nobel, Albermarle, Altatech, Amalfi, AMEC, Anadigic, Applied Materials, Arima, ATMI, ATTO Wonik IPS, Avago, AW SC, AXT, Azur Space, Azzurro, BAE Systems, Bay Zu Precision (BZPC), Black Sand, Bluglass, BluSolar, Boyu, Cambridge Chemicals, CamGan, Century Epitech, CESI, Chemtura, Chi Mei Lighting, China Crystal Technology, Compsolar, Createc, Cree, CV Technology, CVD Equipment Corporation, Cyprium, Daystar Materials, DCA Instruments, Dow Chemical, Dowa Electronics Materials, Eiko, Elmos, Emcore ,EMF Semiconductor systems ,EpiBlu ,EpiGaN ,Epilight, Epistar, Epiworks First Nano, Formosa Epitaxy, Freiberger, Fujiepi, Furukawa, GCS, Genesis Photonics, Guangdon Real Faith Semiconductor Equipments, Hitachi Cable, Hittite, Huga, II-V Lab, Infineon, IntelliEPI, International Rectifier, IQE, Javelin, JDSU Quantasol, Jusung engineering, Kopin, Koyo Thermo systems, Lake LED, Laytech, Lextar, LG Electronic ARI, LG Innotek, LG Siltron, LIG-ADP, Luminus Device, M/A-Com, Mantis, MBE Components, Meaglow, Microlink Devices, Mimix Broadband, Mitsubishi chemical, Mitsubishi Electric, Nanomaster, Nata, Neosemitech, NGK Insulator, Nichia, Nitronex, NTT, Omicron, Ommic, Osaka University, Osram, Oxford Instrument, Panasonic, PB Technik AG, Philips Lumileds, Picogiga/Soitec, Plessey, Powdec, Power Integration, Qingdao Jason Electronic, Rfaxis, RFMD, RFMD, Ribber, Rubicon, SAFC, Samsung LED, Sanan, Sandia, Sanken, SEDI, SEMES, Semprius; Seoul Optodevice / Semiconductor, Sharp, Sheng Optical Equipment, Shinetsu, Skyworks, Solapoint, Solar Junction, SPEC S, Spectrolab, Spire Semiconductor, Structured Materials Industries, Sumika, Sumitomo SEI, SVT Associate, Sylarus Technologies, Sysnex, Taiyo Nippon Senso, Tanlong Photoeelctric, Tectra, Tekcore, Top engineering, Toshiba, Tosoh FineChem, Toyoda Gosei, Toyota, Transphorm, Triquint, UBE, ULVAC, Umicore, UMS, UP Chemical, Valence Process Equipment, Veeco, VG Semicon, VPEC, Win Semi, Xiamen Powerway, Yangzhou Longvao, Yongsheng Semiconductor Equipment.
Table of Contents
Acronyms
Table of Contents
Report Scope
Executive Summary p.6
Introduction
Applications
MOCVD
MBE
MO Precursors
Comparison of III-V epitaxy techniques
Company applications and technologies
Overview of III-V Epitaxy Techniques: MOCVD p.17
Introduction
Chemistry
System Overview
System Overview Examples
Reactor Design: Overview
Reactor Design: Close Coupled Showerhead
Reactor Design : Planetary
Reactor Design: Turbodisc
Reactor Design: Others
Cost of Ownership Drivers: Overview
Cost Of Ownership Drivers: Batch size Evolution
Cost Of Ownership Drivers: Batch size for Nitride reactors
Cost Of Ownership Drivers: Batch size for As/P reactors
Cost Of Ownership Drivers: Transition to larger wafers.
Cost Of Ownership Drivers: Growth rate
Downtime and chamber cleaning
Cost Of Ownership Drivers: Precursor Efficiency
Cost Of Ownership Drivers: Illustration
Main Players: Market shares
Main Players: Other / emerging players
Conclusions
Overview of III-V Epitaxy Techniques: MBE p.47
Introduction
System Overview
Illustration (Production System)
Key Parameters
MBE Sources: Overview
MBE Sources: Design
MBE Sources: Valved Crackers
MBE Sources: Economics
GaN Epitaxy with MBE
MBE Main Players: Overview
Riber: III-V R&D and Production Equipment
Veeco: MBE Offering
DCA Instruments
SVT Associates
Omicron / Oxford Instrument
Eiko Corporation
CreaTec / MBE Components / Tectra
Conclusions
Overview of III-V Epitaxy Techniques: Others p.68
Plasma Assisted MOCVD: Overview
Plasma Assisted MOCVD: Potential Benefits
Plasma Assisted MOCVD: Potential Drawbacks
Plasma Assisted MOCVD: Key Players
Liquid Phase Epitaxy: Overview
Liquid Phase Epitaxy: GaN Epitaxy
HVPE: Overview
HVPE: Applications
HVPE: Commercial Reactors
HB LED Applications - Market p.79
Introduction to HB LEDs
GaN LED Chip Design Overview
LED Manufacturing Process
LED market segments: Overview
High Brightness LED Package Segmentation
Low and Mid Power LEDs: Examples
High Power Packages: Examples
Revenue Forecast by Application
Recent Trends
LED Substrates
LED Wafer Starts
HB LED Applications - Epitaxy p.92
GaN LED Structures
GaN LED Epitaxy Challenges:Overview
GaN LED Epitaxy Challenges: Wafer Curvature
GaN LED Epitaxy Challenges: Solutions
In Situ Metrology
Cost Aspects: Packaged LED cost Roadmap
Cost Aspects: Packaged LED Cost structure
Cost Aspects: GaN LED Epitaxy Cost Structure
The Cost of Yields
Epitaxy Cost Reduction Opportunities
Sorting an Binning: Overview
Sorting and Binning: Binning Yields
LED Epitaxy Cycle Time: Overview
LED Epitaxy Cycle Time: Cluster tools
LED Epitaxy Cycle Time: Hybrid Reactors
GaN LED Epitaxy: Conclusions
ROY LED Epitaxy: Overview
InGaAlP LED Structures: Overview
InGaAlP LED Structures: Substrate Removal
InGaAlP LED Epitaxy: Overview
RF GaAs Applications - Market 118
Introduction
Benefits of GaAs for RF Applications
Applications: Overview
Value Chain
Applications: Details
Device Technologies:
Market Drivers:: Handsets Shipment Forecast (Units)
Market Drivers: Handsets GaAs Content
iPhone 3G& iPhone 4S GaAs Content
GaAs $ Content in Handsets
Market Drivers: WLAN Chipset Forecast (Units)
GaAs $ content in WLAN
Emerging Applications: Smart Grid
Emerging Applications: Smart Lighting
RF GaAs Components: Power Amplifiers
RF GaAs Components: Antenna Switches
Comparison of Switch Technologies
Competing Technologies
RF GaAs Wafer Starts Breakdown
RF GaAS applications: Conclusions
RF GaAs - Epitaxy p.143
Examples of HBT Epitaxial Structures:
Example of HEMT Epitaxial Structure
HEMT and MOCVD
MBE Productivity: Overview
MBE Productivity: Examples
Main Players: Technology & Main products
Main Players: Capacity per Technology (MBE/MOCVD)
Captive and Merchant Capacity
Conclusions
HCPV Applications - Market p.153
Solar Electricity Generation: Overview
Solar Electricity Generation: Demand
HCPV System Components: Overview
HCPV System Components: System Efficiency
HCPV System Components: Examples
HCPV Cells: Overview
HCPV Cells: Historical Efficiency Trends
HCPV Market: Economics
HCPV Market: Benefits
HCPV Market: Drawbacks
HCPV Cost: Cell Efficiency and System Cost
2011 to 2018 HCPV Market Forecast: Key Assumptions
HCPV Installation Forecast
HCPV Applications - Epitaxy p.168
HCPV Epiwafer: Structure and Production Methods
HCPV Epiwafer: Emerging Structures
Main Players and Supply Chain
HCPV Supply Chain: Main Business Models
HCPV Supply Chain: Trends
HCPV System Components: GaAs and Ge Wafers
HCPV Wafer Starts: 2011-2020 forecast
Power GaN Electronic Applications - Market p.179
Introduction
GaN Devices: Value-proposition compared to Si and SiC
GaN Devices in Power Electronics: Possible applications
Power Range of the Targeted Applications
What TAM for GaN?: Market size, split by voltage range
GaN Added Value
GaN Use: Expected improvements in power conversion
GaN-based Power Electronics: Estimated accessible markets, growth rate, and time to market
GaN vs. SiC vs. Si: Figure-of-merit
GaN vs. SiC SWOT Analysis
Why Would GaN Replace Silicon in Power Electronics?
Power Electronics: 2011-2020 value-chain analysis: wafer, device, system
GaN Devices in Power Application: 2010-2020 market size, split by device type
GaN Devices in Power Application: 2010-2020 market size, split by application
GaN Product Introduction Roadmap, based on announcements
Power GaN Electronic Applications - Epitaxy p.195
Power GaN Epitaxial Structures
Power GaN Epitaxy Players
Power GaN Wafer Starts: 2012-2020 forecast
Epitaxy Reactors Forecast p. 200
Wafer Start Per Application: 2009-2020 Forecast
LED Reactors: Capacity Analysis: Geographic Breakdown
LED Reactors: Geographic Trends and Impact on Global Demand
LED Reactors: GaN Reactor Capacity vs. Demand:
LED Reactors: GaN Reactor Capacity vs. Demand:
LED Reactors: Conclusion On Capacity Trends
LED Reactors: Key Forecast Hypothesis
LED Reactors: 2009-2020 Volume Forecast GaN vs. InGaAlP
LED Reactors: 2012-2020 Replacement Market
LED Reactors: 2009-2020: Merchant vs. Captive
RF GaAs Reactors: 2009-2020 Wafer Starts: MBE vs. MOCVD
RF GaAs Reactors: 2009-2020 Forecast per Technology (MBE/MOCVD)
RF GaAs Reactors: 2009-2020 Replacement Market
Power GaN Reactors: Key Hypothesis
Power GaN Reactors: 2009-2020 Forecast & Replacement Market
GaAs HCPV Reactors: Key Hypothesis
GaAs HCPV Reactors: 2009-2020 Forecast per Technology & Replacement Market
Overall Merchant MOCVD Reactor 2012-2012-2020 Volume Forecast
Overall MOCVD Reactor Forecast: 2012-2020 Revenue Forecast
Overall MBE Reactor Forecast: 2012-2020 Volume Forecast
Overall MBE Reactor Forecast: 2012-2020 Revenue Forecast
Conclusion
Annex: Quarterly Aixtron-Veeco MOCVD Booking Trends
MOCVD Precursors p.225
Overview: Precursors and Safety
Logistic: Distribution and Lead Time
MO Precursor Delivery: Overview
MO Precursor Delivery: Centralized Distribution
MO Precursor Delivery: Example of central delivery units
MO Precursor Purity
TMG and TMI 2011 Volume Breakdown per Application
MO Precursors Suppliers
MO Production capacity expansion plants
Top 5 MO Precursor Suppliers
Second Tier and Emerging Suppliers
ASP Trends: Tri Methyl Gallium TMG
ASP Trends: Tri Methyl Indium TMI
ASP Trends: Mid / Long Term
TMG Market Demand vs Capacity: 2009-2020 Trends
Tri Methyl Aluminum: Overview
Dopants: DEZn, DMZn, Bis(CP)Mg
Conclusions
Conclusions p.247
Company Profiles p.251
Aixtron: Company Overview
Aixtron: History
Aixtron: Products and Applications
Aixtron: 2003-2011 Revenue Trends per Segment
Aixtron: 2002-2011 Revenue Trends Per End Market
Aixtron: 2002-2011 MOCVD only Revenue
Taiyo Nippon Sanso: Company Overview
Taiyo Nippon Sanso: 2007-2011 MOCVD Revenue
Riber: Company Overview
Riber: Products and Applications
Riber: 2002-2011 Revenue Trends per Segment
Riber: 2002-2011 R&D vs. Production System Volume &Revenue
Veeco: Company Overview
Veeco: 2000-2011 Year Revenue trends
Veeco: Products and Applications
Veeco: Quarterly Revenue Breakdown by Application
Veeco: Quarterly MOCVD and MBE Booking Trends
Annex: Gross Margin Trends at Aixtron and Veeco
To order this report:
Electric power energy Industry: III-V Epitaxy Equipment & Applications Market
Check our Industry Analysis and Insights
Nicolas Bombourg
Reportlinker
Email: [email protected]
US: (805)652-2626
Intl: +1 805-652-2626
SOURCE Reportlinker
WANT YOUR COMPANY'S NEWS FEATURED ON PRNEWSWIRE.COM?
Newsrooms &
Influencers
Digital Media
Outlets
Journalists
Opted In
Share this article