III-V Epitaxy Equipment & Applications Market

NEW YORK, June 5, 2012 /PRNewswire/ -- Reportlinker.com announces that a new market research report is available in its catalogue:

III-V Epitaxy Equipment & Applications Market

http://www.reportlinker.com/p0874334/III-V-Epitaxy-Equipment--Applications-Market.html#utm_source=prnewswire&utm_medium=pr&utm_campaign=Electric_power_energy

Anticipating the next investment cycle after the dip

A US$6.1 billion opportunity through the end of the decade

MOCVD and MBE represent essentially 100% of the epitaxial tools used in the commercial production of the devices covered in this report. The corresponding combined revenue opportunity for MBE + MOCVD is estimated to be around US$6.1 billion for the 2012-2020 periods.

LED is by far the single largest application for MOCVD. In 2010 and 2011, the MOCVD market experienced the largest investment cycle in its history driven by a combination of:

-Demand for LED backlit LCD TV

-Subsidies by the Chinese central and local governments

-Anticipation for the general lighting market.

This has put the market into a significant overcapacity situation that could take 12-18 months to absorb. The next investment cycle driven by lighting applications and expected to start in 2013 will be more limited than the previous cycle due to improvements in equipment throughput and yields. Following this cycle, further Cost of Ownership (COO) improvements offered by the next generation of MOCVD reactors should justify the replacement of 2-generation-old reactors installed during the 2010-2011 boom and drive a last small equipment cycle in the second half of the decade. By then, Power GaN will also represent a substantial upside for reactor makers.

Overall MBE use is heavily driven by R&D systems (>50% of the total market) and laser applications (telecom, industrial, medical, research) that are not covered in this report.

For the applications covered in this report, the MBE market will be essentially driven by the continuous growth in the cell phone and wireless applications that are making heavy use of GaAs based RF components. Emerging applications like smart grid and the trend toward increasing connectivity and "intelligence" incorporated in many consumer products will provide further opportunities. However, alternative technologies (Si CMOS, LDMOS, SoS, HR SOI etc…) represent a potential threat and could capture shares of the GaAs RF market and reduce the opportunity for MBE. In addition, MOCVD is making progress in HEMT manufacturing. HCPV however could provide a small potential upside for MBE makers.

The report is also covering the trends in reduction of Cost of Ownership (COO) of MOCVD & MBE. The major technical & R&D trends are analyzed to highlight possible business impacts.Quantifications are provided for each application markets in term of devices, wafer start and equipment's.

Report Features:

This report covers established and emerging epitaxy technology for III-V semiconductors used in the following applications:

-High Brightness LED (GaN and InGaAlP based)

-RF GaAs devices

-Power GaN devices

-High concentrated Photovoltaic (HCPV)

The report provides a comprehensive company profile of the main players in MOCVD and MBE business.

MOCVD and MBE equipment market are duopolies but many emerging players could change the landscape:

Aixtron and Veeco are leading in MOCVD, together representing 96% of the market in 2011. Production MOCVD are complex systems. Design and optimization require expertise in multiple fields including flow dynamics, thermodynamics, chemistry, mechanical and electrical engineering. Technological barriers to entry are fairly high. More than 15 emerging players have been identified but so far have been struggling to capture any sizeable share of the market. But the pressure is mounting and established MOCVD makers will need to maintain that technology gap to keep emerging competitors at bay. The main battlefield is that of total cost of ownership. Established MOCVD makers all have technology roadmaps to enable COO reduction of 3X - 4X within the next 5 years through a combination of improved yields, throughputs and precursor utilization efficiency.

For MBE, Riber and Veeco are the only 2 players offering large capacity / large throughput MBE production tools for volume manufacturing. We expect they will maintain this dominant position. However, there are about 10 other MBE manufacturers offering R&D or pilot production systems that also have a strong presence on the general MBE market (DCA, SVT, Eiko…).

The report includes a very detailed analysis of all technology trends and key cost drivers.

Potential overcapacity in MO precursor supply:

The Metal Organic precursor market will also be essentially driven by LED applications. But MOCVD reactor technology improvements (yield, consumption, wafer size…) will lower the amount of TMGa and TMIn needed per cm² of epiwafer.

The 2010 metal organic shortage ended mid 2011 thanks to aggressive capacity expansion by leading suppliers. Further capacity expansion plans from established and emerging suppliers could come online within the next 3 years. If executed as announced, we expect significant oversupply starting from 2012 that could continue through 2016 and beyond. This situation could put pressure on prices. Further MO synthesis technology improvements could provide opportunity for cost reductions. However, the usually volatile prices of raw Indium and Gallium also have a significant impact on cost.

The report provides Metal Organic precursor price, volume & revenue trends.

Company Listing:

Acco, Addon, Aixtron, Akzo Nobel, Albermarle, Altatech, Amalfi, AMEC, Anadigic, Applied Materials, Arima, ATMI, ATTO Wonik IPS, Avago, AW SC, AXT, Azur Space, Azzurro, BAE Systems, Bay Zu Precision (BZPC), Black Sand, Bluglass, BluSolar, Boyu, Cambridge Chemicals, CamGan, Century Epitech, CESI, Chemtura, Chi Mei Lighting, China Crystal Technology, Compsolar, Createc, Cree, CV Technology, CVD Equipment Corporation, Cyprium, Daystar Materials, DCA Instruments, Dow Chemical, Dowa Electronics Materials, Eiko, Elmos, Emcore ,EMF Semiconductor systems ,EpiBlu ,EpiGaN ,Epilight, Epistar, Epiworks First Nano, Formosa Epitaxy, Freiberger, Fujiepi, Furukawa, GCS, Genesis Photonics, Guangdon Real Faith Semiconductor Equipments, Hitachi Cable, Hittite, Huga, II-V Lab, Infineon, IntelliEPI, International Rectifier, IQE, Javelin, JDSU Quantasol, Jusung engineering, Kopin, Koyo Thermo systems, Lake LED, Laytech, Lextar, LG Electronic ARI, LG Innotek, LG Siltron, LIG-ADP, Luminus Device, M/A-Com, Mantis, MBE Components, Meaglow, Microlink Devices, Mimix Broadband, Mitsubishi chemical, Mitsubishi Electric, Nanomaster, Nata, Neosemitech, NGK Insulator, Nichia, Nitronex, NTT, Omicron, Ommic, Osaka University, Osram, Oxford Instrument, Panasonic, PB Technik AG, Philips Lumileds, Picogiga/Soitec, Plessey, Powdec, Power Integration, Qingdao Jason Electronic, Rfaxis, RFMD, RFMD, Ribber, Rubicon, SAFC, Samsung LED, Sanan, Sandia, Sanken, SEDI, SEMES, Semprius; Seoul Optodevice / Semiconductor, Sharp, Sheng Optical Equipment, Shinetsu, Skyworks, Solapoint, Solar Junction, SPEC S, Spectrolab, Spire Semiconductor, Structured Materials Industries, Sumika, Sumitomo SEI, SVT Associate, Sylarus Technologies, Sysnex, Taiyo Nippon Senso, Tanlong Photoeelctric, Tectra, Tekcore, Top engineering, Toshiba, Tosoh FineChem, Toyoda Gosei, Toyota, Transphorm, Triquint, UBE, ULVAC, Umicore, UMS, UP Chemical, Valence Process Equipment, Veeco, VG Semicon, VPEC, Win Semi, Xiamen Powerway, Yangzhou Longvao, Yongsheng Semiconductor Equipment.

Table of Contents

Acronyms

Table of Contents

Report Scope

Executive Summary p.6

Introduction

Applications

MOCVD

MBE

MO Precursors

Comparison of III-V epitaxy techniques

Company applications and technologies

Overview of III-V Epitaxy Techniques: MOCVD p.17

Introduction

Chemistry

System Overview

System Overview Examples

Reactor Design: Overview

Reactor Design: Close Coupled Showerhead

Reactor Design : Planetary

Reactor Design: Turbodisc

Reactor Design: Others

Cost of Ownership Drivers: Overview

Cost Of Ownership Drivers: Batch size Evolution

Cost Of Ownership Drivers: Batch size for Nitride reactors

Cost Of Ownership Drivers: Batch size for As/P reactors

Cost Of Ownership Drivers: Transition to larger wafers.

Cost Of Ownership Drivers: Growth rate

Downtime and chamber cleaning

Cost Of Ownership Drivers: Precursor Efficiency

Cost Of Ownership Drivers: Illustration

Main Players: Market shares

Main Players: Other / emerging players

Conclusions

Overview of III-V Epitaxy Techniques: MBE p.47

Introduction

System Overview

Illustration (Production System)

Key Parameters

MBE Sources: Overview

MBE Sources: Design

MBE Sources: Valved Crackers

MBE Sources: Economics

GaN Epitaxy with MBE

MBE Main Players: Overview

Riber: III-V R&D and Production Equipment

Veeco: MBE Offering

DCA Instruments

SVT Associates

Omicron / Oxford Instrument

Eiko Corporation

CreaTec / MBE Components / Tectra

Conclusions

Overview of III-V Epitaxy Techniques: Others p.68

Plasma Assisted MOCVD: Overview

Plasma Assisted MOCVD: Potential Benefits

Plasma Assisted MOCVD: Potential Drawbacks

Plasma Assisted MOCVD: Key Players

Liquid Phase Epitaxy: Overview

Liquid Phase Epitaxy: GaN Epitaxy

HVPE: Overview

HVPE: Applications

HVPE: Commercial Reactors

HB LED Applications - Market p.79

Introduction to HB LEDs

GaN LED Chip Design Overview

LED Manufacturing Process

LED market segments: Overview

High Brightness LED Package Segmentation

Low and Mid Power LEDs: Examples

High Power Packages: Examples

Revenue Forecast by Application

Recent Trends

LED Substrates

LED Wafer Starts

HB LED Applications - Epitaxy p.92

GaN LED Structures

GaN LED Epitaxy Challenges:Overview

GaN LED Epitaxy Challenges: Wafer Curvature

GaN LED Epitaxy Challenges: Solutions

In Situ Metrology

Cost Aspects: Packaged LED cost Roadmap

Cost Aspects: Packaged LED Cost structure

Cost Aspects: GaN LED Epitaxy Cost Structure

The Cost of Yields

Epitaxy Cost Reduction Opportunities

Sorting an Binning: Overview

Sorting and Binning: Binning Yields

LED Epitaxy Cycle Time: Overview

LED Epitaxy Cycle Time: Cluster tools

LED Epitaxy Cycle Time: Hybrid Reactors

GaN LED Epitaxy: Conclusions

ROY LED Epitaxy: Overview

InGaAlP LED Structures: Overview

InGaAlP LED Structures: Substrate Removal

InGaAlP LED Epitaxy: Overview

RF GaAs Applications - Market 118

Introduction

Benefits of GaAs for RF Applications

Applications: Overview

Value Chain

Applications: Details

Device Technologies:

Market Drivers:: Handsets Shipment Forecast (Units)

Market Drivers: Handsets GaAs Content

iPhone 3G& iPhone 4S GaAs Content

GaAs $ Content in Handsets

Market Drivers: WLAN Chipset Forecast (Units)

GaAs $ content in WLAN

Emerging Applications: Smart Grid

Emerging Applications: Smart Lighting

RF GaAs Components: Power Amplifiers

RF GaAs Components: Antenna Switches

Comparison of Switch Technologies

Competing Technologies

RF GaAs Wafer Starts Breakdown

RF GaAS applications: Conclusions

RF GaAs - Epitaxy p.143

Examples of HBT Epitaxial Structures:

Example of HEMT Epitaxial Structure

HEMT and MOCVD

MBE Productivity: Overview

MBE Productivity: Examples

Main Players: Technology & Main products

Main Players: Capacity per Technology (MBE/MOCVD)

Captive and Merchant Capacity

Conclusions

HCPV Applications - Market p.153

Solar Electricity Generation: Overview

Solar Electricity Generation: Demand

HCPV System Components: Overview

HCPV System Components: System Efficiency

HCPV System Components: Examples

HCPV Cells: Overview

HCPV Cells: Historical Efficiency Trends

HCPV Market: Economics

HCPV Market: Benefits

HCPV Market: Drawbacks

HCPV Cost: Cell Efficiency and System Cost

2011 to 2018 HCPV Market Forecast: Key Assumptions

HCPV Installation Forecast

HCPV Applications - Epitaxy p.168

HCPV Epiwafer: Structure and Production Methods

HCPV Epiwafer: Emerging Structures

Main Players and Supply Chain

HCPV Supply Chain: Main Business Models

HCPV Supply Chain: Trends

HCPV System Components: GaAs and Ge Wafers

HCPV Wafer Starts: 2011-2020 forecast

Power GaN Electronic Applications - Market p.179

Introduction

GaN Devices: Value-proposition compared to Si and SiC

GaN Devices in Power Electronics: Possible applications

Power Range of the Targeted Applications

What TAM for GaN?: Market size, split by voltage range

GaN Added Value

GaN Use: Expected improvements in power conversion

GaN-based Power Electronics: Estimated accessible markets, growth rate, and time to market

GaN vs. SiC vs. Si: Figure-of-merit

GaN vs. SiC SWOT Analysis

Why Would GaN Replace Silicon in Power Electronics?

Power Electronics: 2011-2020 value-chain analysis: wafer, device, system

GaN Devices in Power Application: 2010-2020 market size, split by device type

GaN Devices in Power Application: 2010-2020 market size, split by application

GaN Product Introduction Roadmap, based on announcements

Power GaN Electronic Applications - Epitaxy p.195

Power GaN Epitaxial Structures

Power GaN Epitaxy Players

Power GaN Wafer Starts: 2012-2020 forecast

Epitaxy Reactors Forecast p. 200

Wafer Start Per Application: 2009-2020 Forecast

LED Reactors: Capacity Analysis: Geographic Breakdown

LED Reactors: Geographic Trends and Impact on Global Demand

LED Reactors: GaN Reactor Capacity vs. Demand:

LED Reactors: GaN Reactor Capacity vs. Demand:

LED Reactors: Conclusion On Capacity Trends

LED Reactors: Key Forecast Hypothesis

LED Reactors: 2009-2020 Volume Forecast GaN vs. InGaAlP

LED Reactors: 2012-2020 Replacement Market

LED Reactors: 2009-2020: Merchant vs. Captive

RF GaAs Reactors: 2009-2020 Wafer Starts: MBE vs. MOCVD

RF GaAs Reactors: 2009-2020 Forecast per Technology (MBE/MOCVD)

RF GaAs Reactors: 2009-2020 Replacement Market

Power GaN Reactors: Key Hypothesis

Power GaN Reactors: 2009-2020 Forecast & Replacement Market

GaAs HCPV Reactors: Key Hypothesis

GaAs HCPV Reactors: 2009-2020 Forecast per Technology & Replacement Market

Overall Merchant MOCVD Reactor 2012-2012-2020 Volume Forecast

Overall MOCVD Reactor Forecast: 2012-2020 Revenue Forecast

Overall MBE Reactor Forecast: 2012-2020 Volume Forecast

Overall MBE Reactor Forecast: 2012-2020 Revenue Forecast

Conclusion

Annex: Quarterly Aixtron-Veeco MOCVD Booking Trends

MOCVD Precursors p.225

Overview: Precursors and Safety

Logistic: Distribution and Lead Time

MO Precursor Delivery: Overview

MO Precursor Delivery: Centralized Distribution

MO Precursor Delivery: Example of central delivery units

MO Precursor Purity

TMG and TMI 2011 Volume Breakdown per Application

MO Precursors Suppliers

MO Production capacity expansion plants

Top 5 MO Precursor Suppliers

Second Tier and Emerging Suppliers

ASP Trends: Tri Methyl Gallium TMG

ASP Trends: Tri Methyl Indium TMI

ASP Trends: Mid / Long Term

TMG Market Demand vs Capacity: 2009-2020 Trends

Tri Methyl Aluminum: Overview

Dopants: DEZn, DMZn, Bis(CP)Mg

Conclusions

Conclusions p.247

Company Profiles p.251

Aixtron: Company Overview

Aixtron: History

Aixtron: Products and Applications

Aixtron: 2003-2011 Revenue Trends per Segment

Aixtron: 2002-2011 Revenue Trends Per End Market

Aixtron: 2002-2011 MOCVD only Revenue

Taiyo Nippon Sanso: Company Overview

Taiyo Nippon Sanso: 2007-2011 MOCVD Revenue

Riber: Company Overview

Riber: Products and Applications

Riber: 2002-2011 Revenue Trends per Segment

Riber: 2002-2011 R&D vs. Production System Volume &Revenue

Veeco: Company Overview

Veeco: 2000-2011 Year Revenue trends

Veeco: Products and Applications

Veeco: Quarterly Revenue Breakdown by Application

Veeco: Quarterly MOCVD and MBE Booking Trends

Annex: Gross Margin Trends at Aixtron and Veeco

To order this report:

Electric power energy Industry: III-V Epitaxy Equipment & Applications Market

More Market Research Report

Check our Industry Analysis and Insights

Nicolas Bombourg
Reportlinker
Email: [email protected]
US: (805)652-2626
Intl: +1 805-652-2626

SOURCE Reportlinker