Next-Generation Power Semiconductors: Markets, Materials, Technologies

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Apr 14, 2014, 03:00 ET

DUBLIN, April 14, 2014 /PRNewswire/ --

Research and Markets (http://www.researchandmarkets.com/research/3w2bvf/nextgeneration) has announced the addition of the "Next-Generation Power Semiconductors: Markets, Materials, Technologies" report to their offering.

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The rapid growth of the power semiconductor market in recent years has been driven by the proliferation of computer and consumer electronics, such as desktop computers, notebooks, netbooks, smartphones, flat panel displays and portable media players that require sophisticated power management to improve power efficiency and extend battery life.

The rapid growth of the power semiconductor market in recent years has been driven by the proliferation of computer and consumer electronics, such as desktop computers, notebooks, netbooks, smartphones, flat panel displays and portable media players that require sophisticated power management to improve power efficiency and extend battery life. The worldwide markets are analyzed and projected.

Key Topics Covered:

Chapter 1 Introduction

1.1 Manufacturing Processes Are Differentiation Factors
1.2 Vertical Structure Devices Differ From Usual MOS Planar Structure
1.3 Super Junction Processes

Chapter 2 Applications of Power Semiconductors

2.1 Power Semiconductors in Renewable Energy
2.1.1 Solar
2.1.2 Wind
2.2 Power Semiconductors in Hybrid & Electric Vehicles
2.2.1 Automotive Megatrends
2.2.2 Wide Bandgap Devices for HEVs/EVs
2.3 Power Semiconductors in LED Lighting
2.4 Power Semiconductors in Industrial Motor Drives
2.5 Power Semiconductors in Smart Home Market
2.6 GaN and SiC Market Forecast For End Applications

Chapter 3 Market Analysis

3.1 Position of Power Semiconductors in Semiconductor Market
3.2 Growth Potential of IGBTs and Power MOSFETs
3.3 End Application Markets
3.4 Wide Bandgap Power Semiconductor Market

Chapter 4Next-Generation Power Semiconductors

4.1 Expectations for Overcoming Silicon's Limitations
4.2 Expectations Of SiC and GaN as Next-Generation Substrates
4.3 Benefits of Wide Band Gap Semiconductors
4.4 SiC versus GaN
4.4.1 Material Properties
4.4.2 Material Quality
4.4.3 SiC Lateral Devices:
4.4.4 SiC Vertical Devices
4.4.5 GaN Lateral Devices
4.5 Fabrication of SiC devices
4.5.1 Bulk and Epitaxial Growth of SiC
4.5.1.1 Bulk Growth
4.5.1.2 Epitaxial Growth
4.5.1.3 Defects
4.5.2 Surface Preparation
4.5.3 Etching
4.5.4 Lithography
4.5.5 Ion Implantation
4.5.6 Surface Passivation
4.5.7 Metallization
4.6 Fabrication of GaN devices
4.6.1 GaN Challenges
4.6.1.1 Costs
4.6.1.2 Reliability
4.6.1.3 Component Packaging and Thermal Reliability
4.6.1.4 Control
4.6.1.5 Device Modeling
4.7 Packaging

Chapter 5 Company Profiles

5.1 Power Semiconductor Companies
5.1.1 Infineon
5.1.2 Mitsubishi
5.1.3 Toshiba
5.1.4 STMicroelectronics
5.1.5 Vishay
5.1.6 International Rectifier
5.1.7 Fairchild
5.1.8 Fuji Electric
5.1.9 Renesas
5.1.10 Semikron
5.1.11 NXP Semiconductors
5.2 SiC Wafer-Related Companies
5.3 GaN Wafer-Related Companies
5.4 Profiles of Companies with Next-Generation Activities
5.4.1 Mitsubishi Electric
5.4.2 Fuji Electric Holdings
5.4.3 Toshiba
5.4.4 Rohm
5.4.5 Sanken Electric
5.4.6 Shindengen Electric
5.4.7 Infineon
5.4.8 Microsemi
5.4.9 Cree
5.4.10 GeneSiC Semiconductor
5.4.11 Semisouth Laboratories
5.4.12 United Silicon Carbide
5.4.13 MicroGaN
5.4.14 Powerex
5.4.15 Fairchild
5.4.16 International Rectifier
5.4.17 Nitronix