NEW YORK, April 25, 2012 /PRNewswire/ -- Reportlinker.com announces that a new market research report is available in its catalogue:
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SLOW RAMP-UP BUT HUGE EXPECTATIONS...
The GaN power device industry has probably generated less than $2.5M revenues in 2011, as only 2 companies (IRF & EPC Corp.) are selling products on the open market. However, the overall GaN activity has seen extra revenues as R&D contracts, qualification tests and sampling for qualified customers was extremely buoyant.
At very short term, IRF and EPC will likely remain the two main vendors of GaN power devices on the open market in early 2012. This market is likely to stay below $10M for devices, with the rest being made through R&D sales.
2013 should signal the transition from qualification to production ramp-up for several new entrants.The device market could reach the $50M threshold. In 2014, most of these new entrants will ramp-up their capacity, and by 2015 the availability and adoption of qualified 600V+ GaN devices should see the market grow very quickly, and open doors to non-consumer applications. In 2015, 12-15 players will share the consumption of more than 100,000 x 6" (equiv.) epiwafers.
Beyond that, if GaN is qualified in the EV/HEV sector, GaN device business could top the billion dollar line and the GaN-on-Si substrate market could exceed $300M revenues by 2019. However, it is still unclear how car makers will choose between SiC, GaN or the current Silicon technology. At the substrate end, R&D activities are still quite fragmented between several options involving
GaN-on-Sapphire, GaN-on-SiC, GaN-on-GaN, GaN-on-AlN and GaN-on-Silicon. Nevertheless, GaNon-Si is likely to take a dominant position as 6" is now available with more than 7?m thick GaN epi and 8" is under qualification. 8" diameter availability is probably the parameter that will make this technology choice obvious.
It is now obvious that the GaN power world attracts numerous newcomers. We have screened 5 companies positioned on the epiwafer business side and more than 6 GaN device pure-players, aside to another 15 Si-based power firms developing GaN technology.
GAN POWER ELECTRONICS CROSS-FERTILIZES WITH LED INDUSTRY
A new trend is LED players now starting looking at this new business opportunity and wondering how to put in place a strategy of diversification to convert their existing extra LED capacity into power. That represents an "epsilon" today, but we assume it may create some disturbances in the natural and organic expected growth…
GaN power electronics past, present and future business is inseparable to the LED industry. Both are linked in technology and market dynamics.
In the past, the premises of GaN epi technology came from the LED industry that has brought this technology from the labs to mass production.
Today, the extensive developments of GaN-on-Si epiwafers fertilized both the LED and the Power industry. Most of the epiwafer vendors are targeting these 2 segments with dedicated products and offers.
Tomorrow, it is likely some incumbent LED pure-players will enter in the Power industry world, using their extra-capacity and existing tool-sets to make, at least epiwafers, or even power devices.
Thus, at the end of the day, we won't talk about LED or Power sectors anymore, but rather about"GaN device industry" as main players could be the same…
A QUESTION OF BUSINESS MODEL
Power device makers usually buy polished Silicon wafers, conduct the epi (or buy Si epi-wafers) if needed (FZ thin wafer doesn't require epitaxy) then process the devices. This model is roughly the same for SiC technology.
For those who plan to enter in the GaN field, 2 scenarios could occur:
Some may not integrate MOCVD GaN epitaxy. They will buy GaN epiwafers and process it in the existing CMOS Front-End lines, as they use to do with Silicon substrates (or SiC).
Some will try to fully integrate the GaN process, from the bare silicon, the GaN epi and the Front-End.
This report provides a complete analysis of the GaN device and substrate industry in the power electronics field along with key market metrics. It provides company involvement as well as technology state-of-the-art. In addition, an extensive review of the possible substrates for GaN is provided, offering the most complete view of the Power GaN industry available to date.
INDEX OF COMPANIES MENTIONED IN THE REPORT
Aixtron, AZZURRO, BeMiTec, Bridgelux, CamGaN Ltd, Diotec, Dow Corning, Dowa Electronics Materials,Enphase, EPC Corp., EpiGaN, Episil, Fairchild, FBH, Freescale, Fuji Electric, Furukawa, GaN Systems,GLO AB, Global foundries, HelioDEL, Hitachi, III-V Lab, IMEC, Infineon, International Rectifier, Intersil,IQE, Kyma, LatticeSemiconductor, LG Electronics, LG Siltron, Lumileds, MicroGaN, Microsemi, Mitsubishi Electric, Nitek Inc., Nitronex, NTT, NXP, OnSemi, Osram, Oxford Instruments, Panasonic, Plessey, Semiconductors, Powdec, Power Integrations, Renesas, Rose Street Lab, Samsung, Sanken Electric, Shimei Semiconductor, Shindengen, Siltronic, Soitec, STMicro, Sumitomo SEI, Texas Instruments,Toshiba, Transluscent, Transphorm, TSMC, Tyndall National Institute, Veeco, Velox, Vishay...
TABLE OF CONTENTS
Glossary
Terminology
What we saw, what we missed…Comparison with 2010 report
Executive Summary p.10
Status of the GaN power industry
GaN Power Electronics cross-fertilizes with LED industry!
How do we envision the GaN power electronics story unfolding?
Power GaN: a Question of Business Model…
2010-2020 market size, split by device type
2010-2020 market size, split by application
GaN could exceed 5% of The Overall Power Device Market by 2020…
GaN-on-what? At the end of the day it will be Silicon… As usual
6" GaN-on-Si epiwafer & template market price evolution roadmap to 2020
6" (equiv.) GaN-on-Si Epi-wafer 2010-2020 market size and volume, split by application
GaN-on-Si epiwafers will exceed 1% of the overall Power substrates volume by 2020…
Comparison of Power Electronics substrate (Si, Si-epi, SiC and GaN) market size to 2020
Overall Power Electron ics Market p.23
What TAM for GaN? 2006-2020 overall PE market size, split by device type
Focus on discrete devices
Market size, split by type
Market size, split by voltage range
2011-2020 value-chain analysis: wafer,device,system
Top-20 Power Semiconductor revenues
Power Device Business Regional Analysis
Wafer diameter evolution in Power Electronics 2010-2020
Market size for Si, Si+epi and SOI substrates for the overall Power Electronics business, split by diameter
Application Market Segment Definition and Content
Device revenues distributed by voltage range
GaN Power Electronics Market Segmentation p.34
Why Would GaN Replace Silicon in Power Electronics?
GaN: faster than IGBT, more powerful than MOSFET
Life-cycle of power device technologies A new generation every ~20 years…
GaN Devices in Power Electronics Possible applications
Power Range of the Targeted Applications
Reasons for GaN Added Value
Expected improvements in power conversion
Estimated accessible markets, growth rate, and time to market
GaN vs. SiC SWOT Analysis
GaN vs. SiC vs. Si Figure-of-merit
GaN Industry Involvement p 45
Recent M&A, investments and fund raisings in the GaN area
Top-20 Power Semiconductor Involvement in GaN
Established Power Semiconductor Company Involvement in GaN and future plans
Power GaN main players and related business model
Power device manufacturers
Origin of GaN involvement
Industrial Supply-chain in North America
Industrial Supply-chain in Europe
Industrial Supply-chain in Asia
Typical cycle-time from R&D to mass production in Power Electronics
Status of the GaN-on-Si device makers as of late 2011
GaN Power Device Developments p.56
GaN-on-Si: Main technical steps over the valuechain
Lateral vs. vertical design: pros & cons
Comparison of best GaN HEMT R&D results Vb, I and A/mm² with existing SJ MOSFET and SiC MOSFET
Expected evolution of GaN commercial device current density (A/mm²) to 2020 for several voltage ranges
GaN Product Introduction Roadmap, based on announcements
GaN-based Power Devices Overview of ongoing initiatives
Furukawa Electric
Fujitsu
Hitachi Cable / Hosei University
NEC
Panasonic
Powdec
Sumitomo SEI, Univ. of Fukui and Sharp
Toshiba
Toyota R&D Lab
Sanken Electric
Hong Kong University of Science &
Technology (HKU ST)
GaN Systems "Island technology"
International Rectifier GaNpowIR™
EPC Corp.
Reverse Engineering of EPC EPC 10xx series
GaN transistor die-size as a function of Vb and Id
GaN transistor power and current density
GaN Device Manufacturing Cost Analysis p.92
Typical 200V HEMT cost breakdown
GaN/Si FET Cost Breakdown Model Projection
From 6" wafer to 200V/12A packaged device.2011 status
Manufacturing Price of a 200V/12A Transistor Comparison Si, GaN & SiC
GaN Transistor Specs & Market Price Analysis Comparison with Silicon MOSFET
Expected evolution of GaN device market price in $/amp for several Vb
Payback time for GaN introduction upon 2 applications: PFC 1kW and PV inverter 5kW
What if LED makers use their MOCVD extra-capacity to manufacture Power Devices ? p.99
The rationales and key questions behind such a hypothesis…
Possible impact on the power device economics
GaN MOCVD Capacity Geographic Trends Q4 2009 -> Q1 2012
GaN MOCVD Capacity Installed base and extra unit calculation
GaN MOCVD Reactor Capacity vs. Demand
A 2-step scenario: LED-on-Si then power devices
Step 1: from Sapphire to Silicon
Step 2: from LED to Power Devices
LED-on-Silicon is not a new idea
LED-on-Silicon: Recent Activity
Estimation of MOCVD reactors demand for GaN
Power Electronics
Conclusions
GaN Substrates p.113
Different Substrates for GaN Epitaxy
Direct epi-growth
Composite substrates: wafer bonding approach
AZZURRO Semiconductors (GE)
EpiGaN (B)
IMEC (Belgium)
Institute of Material Research and Engineering "A*Star"
The RoseStreet Lab
Translucent (US)
SOITEC (F) + Sumitomo (J)
AmberWave (US), now Micron
Si-on-PolyAlN composite substrate "BriteGaN"
Bulk & Free-Standing GaN
State-of-the-art results
2010 product status and volume estimations
Specifications: R&D status & emerging projects
2" FS & ELO GaN Substrates
2007-2015 market price
GaN/xx Epiwafer Expected Specs
GaN/xx Epiwafer Usage
Technical feasibility and manufacturing cost
Possible Competing Technologies to GaN
Risk analysis
Possible benefits of 6" to 8"diameter transition upon manufacturing parameters and device cost
Overall GaN-on-Si Competitive Landscape: Who will buy or manufacture GaN substrates ?
The pro/cons of various GaN-on-Si substrate procurement, as perceived by the device makers
Conclusions
Focus on EV/HEV Market p.145
EV/HEV Types and Availability Micro, mild, full and plug in hybrid
HEV/EV Principles and Functionalities
EV/HEV Annual Demand Forecast to 2020 in Munits
Toyota HEV Power Module
Roadmap for Operation Voltage in HEV
HEV Inverter Module Cost Breakdown
Expected Improvements of GaN Introduction in HEV
The TOP 5 Key Requirements For power transistors in
Toyota Vision of WBG Technology use in HEV
GaN vs. SiC & vertical vs. lateral
Device Roadmap for Micro/Mild Hybrid
Device Roadmap for Full/Plug-in Hybrid and EV
Overall Market for Power Modules in EV/HEV Applications
GaN devices in EV/HEV Sales projections
6" GaN epi-wafer Volume for EV/HEV
Focus on Inverters for Solar Panels
Solar Market Segment
PV Inverter Overview
System & component & material architecture
Current usage of Silicon devices in PV inverter DC/AC Stage
System Architecture: Multi-level H-bridge architecture
Devices used for PV Inverter as of today
Implementation of New Technologies SiC vs. GaN
Focus on transistors
SiC vs. GaN battle
PV Inverter Market: Worldwide shipments by market segment
PV Inverters Cost
TOP-5 Main Manufacturers of Solar Inverters
GaN Device Market for PV Inverters
GaN epiwafer Market for PV Inverters 6" equiv.
GaN substrate market volume (units)
Focus on UPS Market
UPS Product Segments
Projection of World UPS Market to 2020 split by power range
UPS Vendor Market Shares
UPS Architecture Examples
GaN Devices in UPS Applications 2010-2020 market forecasts
GaN 6" epi-wafer demand in UPS Applications 2010-2020
Focus on Motor AC Drive
AC Drive Applications
Motor Drive History
AC Drive Market as a Function of Power Range 2010-2020 projectionTotal accessible market volume
Market shares
Supply-chain
Architecture
GaN Device Market Value in AC Drive Applications 2010-2020
6" GaN epi-wafer Market Volume For MotorAC drive applications
Focus on Power Supply & Power Factor Correction Market
PFC Market Main metrics
Main GaN Added Value in PFC circuits
PFC Efficiency Comparison as a function of junction T° and Schottky diode type (Si, SiC and GaN)
GaN Devices main market requirements for PFC applications
Comparison of Si, SiC and GaN Diode Cost in a PFC module
Appendix p.200
European R&D Programs LAST-POWER
European R&D Programs HIPOSWITCH
European R&D Programs MORGaN
European R&D Programs E3Car
European R&D Programs THOR
France R&D Programs G2REC
German R&D Programs NEUL AND
IMEC Industrial Affiliation Program
Taiwan R&D Programs Wide-bandgap electronics alliance
Fuji Electric and Furukawa to partner on GaN power devices
Furukawa teams-up with Powdec on GaN power electronics
To order this report:
Electronic Component and Semiconductor Industry: Power GaN 2012
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Nicolas Bombourg
Reportlinker
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