pSemi GaN FET Driver Delivers Fast Switching to Solid-state LiDAR Systems

The PE29101 High-speed Driver Boasts the Industry's Fastest Rise Times and a Low Minimum Pulse Width

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Jun 12, 2018, 09:15 ET

PHILADELPHIA, June 12, 2018 /PRNewswire/ -- INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) -- In IMS Booth #1349, pSemi™ Corporation (formerly known as Peregrine Semiconductor), a Murata company focused on semiconductor integration, announces the availability of the PE29101 gallium nitride (GaN) field-effect transistor (FET) driver for solid-state light detection and ranging (LiDAR) systems. The PE29101 boasts the industry's fastest rise times and a low minimum pulse width. This high-speed driver enables design engineers to extract the full performance and switching speed advantages from GaN transistors. In solid-state LiDAR systems, faster switching translates into improved resolution and accuracy in the LiDAR image.

The pSemi PE29101 high-speed driver enables design engineers to extract the full performance and switching speed advantages from GaN transistors. In solid-state LiDAR systems, faster switching translates into improved resolution and accuracy in the LiDAR image.

pSemi announces the availability of the PE29101 gallium nitride (GaN) field-effect transistor (FET) driver for solid-state light detection and ranging (LiDAR) systems. The PE29101 boasts the industry’s fastest rise times and a low minimum pulse width.

"As GaN is proving its relevance in applications like solid-state LiDAR, design engineers are using pSemi high-speed drivers to maximize the fast switching benefits of GaN," says Jim Cable, chief technology officer of pSemi. "Because of its rise and fall speed, the PE29101 enables the highest possible resolution imagery—something the industry needs for LiDAR to reach its fullest potential."

LiDAR operates on the same principles as radar but instead uses pulsed lasers to precisely map surrounding areas. Traditionally used in high-resolution mapping, LiDAR is now used in advanced-driver assistance programs (ADAS) and is widely seen as an enabling technology to fully autonomous vehicles. Furthermore, solid-state LiDAR has emerged as the future leader in the commercialization of LiDAR systems, largely due to its affordability, reliability and compact size compared to mechanical sensors.

In LiDAR systems, the pulse laser's switching speed and rise time directly impacts the measurement's accuracy. To improve resolution, the current must switch as quickly as possible through the laser diode. GaN technology offers LiDAR systems superior resolution and a faster response time because of its very low input capacitance and its ability to switch significantly faster than metal-oxide semiconductor field-effect transistors (MOSFETs).

GaN FETs must be controlled by a very fast driver to maximize their fast-switching potential. Increasing the switching speed requires a driver with fast rise times and a low minimum output pulse width. The PE29101 offers these key performance specifications, enabling GaN technology to improve LiDAR resolution.

Features, Packaging, Price and Availability
The PE29101 is a half-bridge FET driver that controls the gates of GaN transistors. The driver outputs are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. The PE29101 has a rise/ fall time of 1 ns with 100 pF load and a minimum output pulse width of 2 ns. It operates from 4V to 6.5V and can support a high side floating supply voltage of 80V. The PE29101 has an output source current of 2A and an output sink current of 4A.

Offered as a flip-chip die, PE29101 volume-production parts, samples and evaluation kits are available now. For 1K quantity orders, each PE29101 is $2.79 USD. Contact [email protected] for more information.

Features	PE29101 GaN FET Driver
Switching Frequency	40 MHz
Rise/ Fall Time	1 ns
Minimum Pulse Width	2 ns
Voltage Handling	80V
Source/ Sink Current	2A/ 4A
Package	Flip-chip Die

Visit pSemi at IMS booth #1349 to learn more about the PE29101 high-speed driver for LiDAR applications.

About pSemi
pSemi Corporation is a Murata company driving semiconductor integration. pSemi builds on Peregrine Semiconductor's 30-year legacy of technology advancements and strong IP portfolio but with a new mission: to enhance Murata's world-class capabilities with high-performance RF, analog, mixed-signal and optical solutions. With a strong foundation in RF integration, pSemi's product portfolio now spans power management, connected sensors, optical transceivers antenna tuning and RF frontends. These intelligent and efficient semiconductors enable advanced modules for smartphones, base stations, personal computers, electric vehicles, data centers, IoT devices and healthcare. From headquarters in San Diego and offices around the world, pSemi's team explores new ways to make electronics for the connected world smaller, thinner, faster and better. To view pSemi's semiconductor advancements or to join the pSemi team, visit www.psemi.com.

The Peregrine Semiconductor name, Peregrine Semiconductor logo and UltraCMOS are registered trademarks and the pSemi name, pSemi logo, HaRP and DuNE are trademarks of pSemi Corporation in the U.S. and other countries. All other trademarks are the property of their respective companies. The pSemi website is copyrighted by pSemi Corporation. All rights reserved.

Editorial Contact:
Elizabeth Brown
Townsend Team
Phone: 619.993.4648
[email protected]

SOURCE pSemi Corporation