Toshiba Introduces 40V/45V N-Channel Power MOSFETs with Industry-Leading Low On-Resistance
Expands Lineup of Low-Voltage U-MOS IX-H Series MOSFETs
Expands Lineup of Low-Voltage U-MOS IX-H Series MOSFETs
IRVINE, Calif., May 10, 2017 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC)* has expanded its U-MOS IX-H Series of low-voltage N-channel power MOSFETs with the addition of new 40V and 45V products. Delivering high-speed performance and industry-leading[1] low on-resistance, the new MOSFETs are designed for industrial and consumer applications, including high-efficiency DC-DC converters, high-efficiency AC-DC converters, power supplies, and motor drives.
The new MOSFETs utilize Toshiba's latest generation low-voltage trench structure U-MOS IX-H process to lower the performance index for "RDS(ON) * Qsw"[2] figure of merit, improving switching applications to a level that surpasses other offerings[3]. Output loss is improved by the reduction of output charge, which can contribute to higher set efficiency. Additionally, the cell structures used in the new MOSFETs are optimized to suppress spike voltage and ringing during switching, which can contribute to lowering set EMI.
Toshiba's U-MOS IX-H Series is specifically designed for synchronous rectification applications, including the secondary side of isolated switching power supplies. It provides an improved Qoss[4] performance, which is one of the main causes of power loss of synchronous rectification. The U-MOS IX-H Series also provides a low Ron•Qoss, the trade-off characteristics between on-resistance and Qoss. Since Ron has a significant impact on Qoss, Toshiba will extend the U-MOS IX-H portfolio to include MOSFETs having ultra-low Ron in order to supplement its U-MOS VIII-H Series of MOSFETs.
Features
Main Specifications
(Unless otherwise specified, @Ta=25°C)
| Part number |
Polarity |
Absolute maximum ratings
|
Drain-source On- RDS(ON) max (mΩ)
|
Total gate charge Qg
typ. (nC)
|
Output charge Qoss
typ. (nC)
|
Gate switch charge QSW
typ. (nC)
|
Input capacitance Ciss
typ. (pF)
|
Package |
||
| Drain- source voltage VDSS
(V)
|
Drain current (DC) ID
@TC=25°C (A)
|
@VGS =10 V |
@VGS =4.5 V |
|||||||
| TPH7R204PL*4 |
N-ch |
40 |
48 |
7.2 |
9.7 |
24 |
16 |
6.9 |
1570 |
SOP Advance |
| TPH6R004PL*4 |
49 |
6.0 |
8.4 |
30 |
20 |
9 |
2100 |
SOP Advance |
||
| TPH3R704PC*4 |
82 |
3.7 |
5.8 |
47 |
28 |
14 |
2780 |
SOP Advance |
||
| TPH2R104PL*4 |
100 |
2.1 |
3.1 |
78 |
46 |
21 |
4790 |
SOP Advance |
||
| TPHR8504PL*4 |
150 |
0.85 |
1.4 |
103 |
85.4 |
23 |
7370 |
SOP Advance |
||
| TPN7R504PL*4 |
38 |
7.5 |
10 |
24 |
16 |
6.9 |
1570 |
TSON Advance |
||
| TK3R1E04PL*4 |
100 |
3.1 |
3.8 |
63.4 |
42 |
17.5 |
4670 |
TO-220 |
||
| TK3R1A04PL*4 |
82 |
3.1 |
3.8 |
63.4 |
42 |
17.5 |
4670 |
TO-220SIS |
||
| TPWR8004PL*4 |
150 |
0.80 |
1.35 |
103 |
85.4 |
23 |
7370 |
DSOP Advance |
||
| TPN3R704PL |
80 |
3.7 |
6.0 |
27 |
20.2 |
8.1 |
1910 |
TSON Advance |
||
| TPN2R304PL |
80 |
2.3 |
4.0 |
41 |
27 |
10.8 |
2750 |
TSON Advance |
||
| TPH3R704PL |
92 |
3.7 |
6.0 |
27 |
20.2 |
8.1 |
1910 |
SOP Advance |
||
| TPH1R204PL |
150 |
1.24 |
2.1 |
74 |
56 |
17 |
5500 |
SOP Advance |
||
| TPH2R805PL*4 |
45 |
100 |
2.8 |
3.9 |
73 |
55 |
22 |
3980 |
SOP Advance |
|
| TPH1R405PL*4 |
120 |
1.4 |
2.3 |
74 |
67 |
22 |
4830 |
SOP Advance |
||
| TPH1R005PL*4 |
150 |
1.04 |
1.7 |
122 |
98 |
34 |
7700 |
SOP Advance |
||
| TPN2R805PL*4 |
80 |
2.8 |
5.0 |
39 |
32 |
12 |
2450 |
TSON Advance |
||
| TPW1R005PL*4 |
150 |
0.99 |
1.65 |
122 |
98 |
34 |
7700 |
DSOP Advance |
||
Pricing and Availability
The new MOSFETs are available now. For more details, samples and pricing information, please contact your local Toshiba Sales Office.
Notes
[1] In the category of products with the same ratings, as of December 9, 2016. Toshiba survey.
[2] RDS(ON): Drain-source on-resistance
Qsw: Gate switch charge
[3] Toshiba products using the previous generation U-MOS VIII-H process
[4] Qoss: Output charge (drain-source charge)
*About TAEC
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, VARs, distributors and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, solid state drives (SSDs), hard disk drives (HDDs), solid state hybrid drives (SSHDs), discrete devices, custom SoCs/ASICs, imaging products, microcontrollers, wireless components, mobile peripheral devices, and advanced materials that make possible today's leading smartphones, tablets, cameras, medical devices, automotive electronics, industrial applications, enterprise solutions and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor, solid state drive and hard disk drive manufacturer and the world's seventh largest semiconductor manufacturer (Gartner, 2015 Worldwide Semiconductor Revenue, January, 2016). Founded in Tokyo in 1875, Toshiba is at the heart of a global network of over 550 consolidated companies employing over 188,000 people worldwide (as of March 31, 2016). Visit Toshiba's web site at http://toshiba.semicon-storage.com.
Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.
MEDIA CONTACT:
Dena Jacobson
Lages & Associates
Tel.: (949) 453-8080
[email protected]
SOURCE Toshiba America Electronic Components, Inc.
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