Complete Teardown Report of UnitedSiC UJN1205K 1200V SiC JFET 2018 with a Comparison of JFETs from UnitedSiC and SemiSouth

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Jun 19, 2018, 06:45 ET

DUBLIN, June 19, 2018 /PRNewswire/ --

The "UnitedSiC UJN1205K 1200V SiC JFET Complete Teardown Report" report has been added to ResearchAndMarkets.com's offering.

This report presents a deep technology analysis of the UJN1205K device, assembled in a TO247 package. Also included is a production cost analysis, and comparisons with its JFET counterpart from SemiSouth. This comparison highlights the differences in the design technology choices and the electrical/geometrical parameters.

Silicon carbide-based device penetration is expanding in industrial applications. JFET is one of them. UnitedSiC offers two types of medium-voltage (1200V) SiC JFETs, with the UJN1205K achieving the highest current (38A).

This JFET is marketed as the ideal solution for circuit protection because of its ability to handle peak temperatures and limit current by a rapid decrease due to self-heating. The device also offers a low on-resistance of 45m?, but a very high current density of 4.08 A/mm2 at 25C, thanks in large part to its trench structure with special openings for contacts.

UnitedSiC employs in its JFET structure a unique angled implantation process to improve threshold voltage control, and a silicide for both gate and source contact to boost contact resistance.

Owing to its design, the device's cost is very competitive regarding its special steps.

Also, the packaging is optimized for cost-savings.

Key Topics Covered:

1. Introduction

Executive Summary
Reverse Costing Methodology
Glossary
SiC Power Device Market

2. Company Profile

UnitedSiC
Portfolio
Supply Chain

3. Physical Analysis

Physical Analysis - Summary
Package Analysis

Package opening
Package cross-section

JFET Die

JFET die view and dimensions
JFET delayering and main blocs
JFET die process
JFET die cross-section
JFET die process characteristics

4. Manufacturing Process

JFET Die Front-End Process
JFET Fabrication Unit
Packaging Process and Fabrication Unit

5. Cost Analysis

Summary of the Cost Analysis
Yields Explanation and Hypotheses
JFET Die

JFET die front-end cost
JFET die probe test, thinning and dicing
JFET die wafer cost
JFET die cost

Complete Device

Assembled components cost
Assembly summary
Component cost

6. Sales Price

7. Comparison of JFETs from UnitedSiC and SemiSouth

8. Company Services

For more information about this report visit https://www.researchandmarkets.com/research/mbr3jc/complete_teardown?w=5

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SOURCE Research and Markets