2014 Report on the International Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer Market - Forecast to 2022
DUBLIN, June 25, 2014 /PRNewswire/ -- Research and Markets (http://www.researchandmarkets.com/research/6pbpzk/gallium_nitride) has announced the addition of the "2014 Report on the International Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer Market - Forecast to 2022" report to their offering.
http://photos.prnewswire.com/prnh/20130307/600769
This report concerning the GaN device and wafer market identifies the entire market and all its sub-segments through extensively detailed classifications, in terms of revenue, shipments and ASPs.
This market report has detailed research study on GaN market with respect to devices and substrate wafers. The report consists of a detailed market breakdown combined with qualitative analysis at each aspect of classification.
Qualitative analysis is carried out for form factor, design architecture, substrate technology, products, devices, manufacturing process, thickness parameters, design configurations and others. The qualitative analysis of GaN device and wafers include the discussion on market dynamics such as market drivers, restraints, opportunities. Other qualitative analysis about the GaN market are burning issues, winning imperatives, porter's five forces, and other market trends. The quantitative analysis is done for major segments like applications, geography and others.
The scope of this report includes only the market for semiconductor core devices manufactured using Gallium Nitride, as their epitaxy or substrate material. Thus, it only comprises the market for core discrete devices (diodes and transistors) and ICs. The market statistics of more complex and typically used electronic devices such as modules, packages, electronic equipments, and the other similar devices are not included in any way in the market statistics mentioned in this report. The complete market viewed and analyzed in this report is only for GaN semiconductor devices and substrate wafer in all the aspects and chapters.
The market statistics with regards to revenue and volume mentioned throughout this report do not cover the aspects related to gallium raw material, wafers, dies or any other intermediate stage of the several industry processes in the supply chain. An illustrative diagram of the GaN semiconductor monetary chain, showing the clear view of the market considered and analyzed in this report for quantitative data and statistics is given in the later stages of the report.
The scope of this report includes only the market for semiconductor core devices manufactured using Gallium Nitride, as their epitaxy or substrate material. Thus, it only comprises the market for core discrete devices (diodes and transistors) and ICs. The market statistics of more complex and typically used electronic devices such as modules, packages, electronic equipments, and the other similar devices are not included in any way in the market statistics mentioned in this report.
Key Topics Covered:
1 Introduction
2 Executive Summary
3 Market Overview
4 Market Analysis
5 Value & Supply Chain Analysis
6 Market By Application
7 Market By Products
8 Power Semiconductors Market By Devices
9 Market By Technology
10 Gan Substrate Wafer Market
11 Market By Geography
12 Competitive Landscape
13 Company Profiles
Companies Mentioned:
- Aixtron Se
- Azzurro Semiconductors Ag
- Cree Incorporated
- Epigan Nv
- Fujitsu Limited
- International Quantum Epitaxy Plc
- Koninklijke Philips N.V.
- Mitsubishi Chemical Corporation
- Nippon Telegraph & Telephone - Advance Technology Corporation
- Rf Micro Devices Incorporated
- Texas Instruments Incorporated
- Toshiba Corporation
For more information visit http://www.researchandmarkets.com/research/6pbpzk/gallium_nitride
Media Contact: Laura Wood, +353-1-481-1716, [email protected]
SOURCE Research and Markets
WANT YOUR COMPANY'S NEWS FEATURED ON PRNEWSWIRE.COM?
Newsrooms &
Influencers
Digital Media
Outlets
Journalists
Opted In
Share this article