However one of the major restraints of the GaN semiconductor devices market is the high production cost of pure Gallium nitride as compared to silicon carbide, which has been a dominant semiconductor material for high voltage power electronics for a decade. The various costs involved in the production of GaN devices include cost of substrate, fabrication, packaging, support electronics and development. Thus, high cost is one of the major challenges in the commercialization of GaN based devices. Though producing GaN in large volumes can help overcome these issues, currently, there is no widespread adopted method for growing GaN in bulk due to high operating pressures and temperatures, low material quality and limited scalability.
The competitive profiling of the key players in the global Gan semiconductor devices market and their market shares across four regions which include North America, Europe, Asia Pacific and Rest of the World (RoW) have been exhaustively covered under the purview of the study. Moreover, the distinct business strategies that have been adopted by the major players in the market have also been included in the report.
A comprehensive analysis of market dynamics, which include the market drivers, restraints and opportunities, is included under the scope of the report. Market dynamics are the distinctive factors that influence the growth of the specific market and therefore help to study the current trends in the global market. Additionally, list of top GaN based IC manufacturers have also been included under the scope of the research. Thus, this report provides an inclusive study of the global GaN semiconductor devices market and also provides the forecast of the market for the period from 2016-2024.
Some of the major players in the market are: Mersen S.A., Avogy, Inc., Fujitsu Limited, GaN Systems Inc., Cree Inc., NXP Semiconductors N.V., Renesas Electronics Corporation, Toshiba Corporation, Everlight Electronics Co. and Efficient Power Conversion Corporation
The global GaN semiconductor devices market has been segmented into:
Global GaN semiconductor devices market, by Products
GaN Radio Frequency Devices
Global GaN semiconductor devices market, by Wafer Size: The market is broadly segmented on the basis of wafer size into:
Global GaN semiconductor devices market, by Application: The market is broadly segmented on the basis of application into:
Information and Communication Technology
Defense and Aerospace
Global GaN semiconductor devices market, by Geography: The market is broadly segmented on the basis of geography into:
Rest of the World
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