Global Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Field Effect Transistor (MOSFETs) Market 2015-2021

Nov 09, 2015, 08:10 ET from Research and Markets

DUBLIN, Nov. 09, 2015 /PRNewswire/ --

Research and Markets(http://www.researchandmarkets.com/research/slxc3p/global_market) has announced the addition of the "Global Market Size of Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Field Effect Transistor (MOSFETs) Market" report to their offering.

Globally the combined market size of Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Field Effect Transistor (MOSFETs) was worth USD 4785.6 million in 2013 and it is expected to be more than USD 12 billion by 2021 growing at a CAGR of 11.7% from 2014 to 2021.

The market for IGBTs is relatively mature while the market for MOSFETs is likely to grow at a faster pace due its advance features. MOSFETs are new semiconductors and are anticipated to witness significant demand over the period of 2015 to 2021. In 2013 the IGBTs accounted for more than 75% of the market size of IGBTS and MOSFETs together. Key attributes such as high efficiency, faster switching and small form factor are expected to boost the demand for MOSFETs over the next few years. MOSFETs are relatively costlier than IGBTs however, IGBTs are already popular in the global market and hence hold larger market size than that of MOSFETs. Additionally, IGBTs find more demand in the industry due to their low prices and higher efficiency however it is preferred in the applications that do not require fast switching.

The report covers the analysis of global as well as regional markets of IGBTs and MOSFET semiconductors. Moreover the report provides deep insights on demand forecasts, market trends and micro and macro indicators. In addition, this report provides insights on the factors that driving and restraining the demand globally as well as regionally. Moreover key investment market analysis given in the report brings an insight on the investment areas that existing or new market players can consider.

Furthermore, the report profiles the leading market players in global insulated gate bipolar transistors (IGBTS) and metal oxide field effect transistor (MOSFETS) market including Fairchild Semiconductor International Inc., STMicroelectronics N.V., ABB Ltd., Hitachi Power Semiconductor Device Ltd., Toshiba Corporation, Mitsubishi Electric Corporation, and Infineon Technologies AG.

Key Topics Covered:

1 Preface

2 Executive Summary

3 Market Overview

4 Global IGBT and MOFETs Market Analysis by Product types, 2014 - 2021

5 Global IGBT and MOFETs Market Analysis by Applications, 2014 - 2021

6 IGBT and Super Junction MOFETs Market - Region Analysis , 2013- 2021

7 Company Profiles

- ABB Ltd
- Fujji Electric Company Ltd.
- Hitachi Power Semiconductor Devices Ltd
- Infineon Technologies AG.
- Mitsubishi Electric Corporation
- STMicroelectronics N.V.
- Toshiba Corporation

For more information visit http://www.researchandmarkets.com/research/slxc3p/global_market

Media Contact: Laura Wood , +353-1-481-1716, press@researchandmarkets.net

SOURCE Research and Markets



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