"This demonstration is a milestone in our business, and is the direct result of intense device R&D coupled with the use of our exclusive high quality AlN substrate material," stated HexaTech CEO John Goehrke. He added, "This capability allows us to engage the UV-C LED market at the right moment, linking together incredibly strong interest with cutting-edge performance. It also clearly demonstrates our continued assertion that the best substrate material yields the best device performance, and this first generation result is just the beginning."
"We are truly excited to be in a position to support the rapidly expanding UV-C LED customer interest seen over the last several years," remarked Gregory Mills, HexaTech's Director of Business Development. "With point-of-use (POU) sterilization applications alone representing a $400M+ opportunity in the coming years, we anticipate significant corporate expansion and strategic customer engagement," he noted.
Dr. Joseph Smart, Director of LED Development commented, "HexaTech's world-leading, high quality bulk AlN substrates are the essential foundation for attaining these results, enabling near perfect epitaxial growth quality throughout the active region of the device, essential to produce both high internal quantum efficiency (IQE) and long component lifetimes. This is something that competing sapphire substrate technology simply cannot sustain at these wavelengths."
For more information on HexaTech's UVSureTM UV-C LED technology, please visit www.hexatechinc.com/uv-c-led, or contact HexaTech at email@example.com.
HexaTech is an industry-leading manufacturer of single crystal Aluminum Nitride (AlN) substrates. This substrate material is enabling long life UV-C light emitting diodes (LEDs) for disinfection applications, deep UV lasers for biological threat detection, and high voltage power semiconductors for smart grid and efficient power conversion.
HexaTech's current product lines include single crystal and polycrystalline AlN substrates, as well as long life UV-C LEDs. High voltage power devices based on AlN substrates are also in development.
Founded in 2001 with a team of industry experts in III-nitride semiconductors, the team has successfully solved complex material science and engineering challenges to commercialize high quality bulk AlN for volume production. For additional company and product information, please visit us at www.hexatechinc.com.
Contact: Greg Mills
+1 919 415 1495
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SOURCE HexaTech Inc.