Microsemi Announces New IdealPoE Diode Bridge Offering Integrated IC with Low Loss MOSFET Base Bridges and Controller Highly Integrated Device Ideal for PoE- and PoH-powered Solutions in Wireless LAN Access Points, Small Cells, Small Switches/Routers and Other Applications Demanding High-efficiency or High Current Designs
ALISO VIEJO, Calif., Jan. 2, 2014 /PRNewswire/ -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced its new PD70224 IdealPoE™ diode bridge, a dual pack of MOSFET-based full-bridge rectifiers. The device's low-RDS 0.16Ohm N-channel MOSFETS allow for much higher overall efficiency and higher output power, particularly when used in powered devices for Power-over-Ethernet (PoE) and Power-over-HDBaseT (PoH) applications in the communications and enterprise markets including wireless LAN access points, small cells and small switches/routers. Unlike similar solutions currently on the market, this highly integrated device eliminates the need to add additional external components such as controllers and field effect transistors (FETs), reducing overall system cost as well as board real estate.
"In PoE- and PoH-powered solutions when high-efficiency or high-power was required, system designers were used to implementing their designs using discrete components. Now the new IdealPoE diode bridge PD70224 implements the input power device PoE bridge, offering an integrated solution that's unique in the market and provides best-in-class performance," said Iris Shuker, PoE product line manager for Microsemi. "This highly integrated solution dissipates less power, simplifies the customer's design and saves printed circuit board space."
Microsemi's PD70224 can support over 1 amp (A) of current, making it the ideal choice not only for modern energy-saving two-pair applications compliant with IEEE802.3af and IEEE802.3at, but also for four-pair powered devices using Universal PoE (up to 51 watts) and PoH (up to 95 watts). The entire drive circuitry for driving the MOSFETs is on-chip, including a charge pump for driving the high-side N-channel MOSFETs. The total forward drop (bridge offset) introduced by the ideal bridge rectifier is only 192 millivolt (mV) at 0.6A, compared to a standard bridge rectifier that typically presents 2,000mV of forward drop.
Other product features include:
- Designed for PoE applications
- Self-contained drive circuitry for MOSFETs
- Integrated 0.16Ohm N-channel MOSFETs for 0.3Ohm total path resistance
- "Power present" indicator signals for identifying four-pair bridge power
- Low leakage of less than 12 micro ampere uA during detection
- Wide operating voltage range up to 57 volts
- -40 degrees C to +85 degrees C ambient
- Available in 40 pin package
- RoHS compliant
Sample and Volume Production Availability
Microsemi's new PD70224 ideal diode bridge devices are sampling now, with volume production beginning this month. For more information or to obtain a sample, contact a local distributor or Microsemi sales representative, or email email@example.com and type "PD70224" in the subject line.
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com.
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"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Any statements set forth in this news release that are not entirely historical and factual in nature, including without limitation statements related to its new PD70224 IdealPoE diode bridge, and its potential effects on future business, are forward-looking statements. These forward-looking statements are based on our current expectations and are inherently subject to risks and uncertainties that could cause actual results to differ materially from those expressed in the forward-looking statements. The potential risks and uncertainties include, but are not limited to, such factors as rapidly changing technology and product obsolescence, potential cost increases, variations in customer order preferences, weakness or competitive pricing environment of the marketplace, uncertain demand for and acceptance of the company's products, adverse circumstances in any of our end markets, results of in-process or planned development or marketing and promotional campaigns, difficulties foreseeing future demand, potential non-realization of expected orders or non-realization of backlog, product returns, product liability, and other potential unexpected business and economic conditions or adverse changes in current or expected industry conditions, difficulties and costs of protecting patents and other proprietary rights, inventory obsolescence and difficulties regarding customer qualification of products. In addition to these factors and any other factors mentioned elsewhere in this news release, the reader should refer as well to the factors, uncertainties or risks identified in the company's most recent Form 10-K and all subsequent Form 10-Q reports filed by Microsemi with the SEC. Additional risk factors may be identified from time to time in Microsemi's future filings. The forward-looking statements included in this release speak only as of the date hereof, and Microsemi does not undertake any obligation to update these forward-looking statements to reflect subsequent events or circumstances.
SOURCE Microsemi Corporation