Microsemi Releases New Generation of High-power, High-performance 650V NPT IGBTs for Industrial Applications Fast and Efficient 40A, 70A and 95A Transistors Deliver Industry's Best Switching Loss Performance

ALISO VIEJO, Calif., July 11, 2013 /PRNewswire/ -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced the availability of its next-generation of 650 volt (V) non-punch through (NPT) insulated bipolar gate transistors (IGBTs), offered in 45A, 70A and 95A current ratings. Microsemi's new NPT IGBT product family is designed for operation in harsh environments and is particularly well-suited for industrial products such as solar inverters, welders and switch mode power supplies.

(Logo:  http://photos.prnewswire.com/prnh/20110909/MM66070LOGO)

Microsemi's new power devices improve efficiency by delivering the industry's best loss performance—approximately 8 percent better than the closest competitor's IGBT. The NPT IGBTs also enable extremely high switching speeds of up to 150 kilohertz (kHz), which are further improved when the transistors are paired with Microsemi's silicon carbide (SiC) free-wheeling diodes. These leading edge 650V NPT IGBTs allow developers to reduce total system costs by replacing more costly 600V to 650V MOSFETs for lower speed applications up to 150 KHz.

All of the devices in the next-generation 650V product family are based on Microsemi's advanced Power MOS 8 technology and leverage a state-of-the-art wafer thinning process. This enables a significant reduction in total switching losses and allows the devices to operate at incredibly fast switching frequencies compared to competitive solutions. With the company's rich heritage in the high-power, high-reliability markets, Microsemi expects to expand its share in the IGBT market, which is growing from $3.6 billion today to $6 billion in 2018, according to a recent report from Yole Developpement.

The NPT IGBTs are easy to parallel (positive temperature coefficient of Vcesat) to improve reliability in high current modules. The devices are also short circuit withstand time rated (SCWT), providing reliable operation in harsh industrial environments.

The IGBT products are available in a variety packages including TO-247, T-MAX and modules. To learn more or obtain a sample, contact a local distributor or Microsemi sales representative, or email sales.support@microsemi.com. Additional production information is posted at www.microsemi.com.

About Microsemi
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance, radiation-hardened and highly reliable analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com.

Microsemi and the Microsemi logo are registered trademarks or service marks of Microsemi Corporation and/or its affiliates. Third-party trademarks and service marks mentioned herein are the property of their respective owners.

"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Any statements set forth in this news release that are not entirely historical and factual in nature, including without limitation statements related to its next-generation of 650 volt (V) non-punch through (NPT) insulated bipolar gate transistors (IGBTs) and its potential effects on future business, are forward-looking statements. These forward-looking statements are based on our current expectations and are inherently subject to risks and uncertainties that could cause actual results to differ materially from those expressed in the forward-looking statements. The potential risks and uncertainties include, but are not limited to, such factors as rapidly changing technology and product obsolescence, potential cost increases, variations in customer order preferences, weakness or competitive pricing environment of the marketplace, uncertain demand for and acceptance of the company's products, adverse circumstances in any of our end markets, results of in-process or planned development or marketing and promotional campaigns, difficulties foreseeing future demand, potential non-realization of expected orders or non-realization of backlog, product returns, product liability, and other potential unexpected business and economic conditions or adverse changes in current or expected industry conditions, difficulties and costs of protecting patents and other proprietary rights, inventory obsolescence and difficulties regarding customer qualification of products. In addition to these factors and any other factors mentioned elsewhere in this news release, the reader should refer as well to the factors, uncertainties or risks identified in the company's most recent Form 10-K and all subsequent Form 10-Q reports filed by Microsemi with the SEC. Additional risk factors may be identified from time to time in Microsemi's future filings. The forward-looking statements included in this release speak only as of the date hereof, and Microsemi does not undertake any obligation to update these forward-looking statements to reflect subsequent events or circumstances.

MSCCP

SOURCE Microsemi Corporation



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