RFMD® Introduces Power Amplifiers With Breakthrough Peak Efficiency
RFMD's RF724x 4G HSPA+ Power Amplifiers Deliver Up To 51% Peak Efficiency
Production Orders Received From A Leading Smartphone Manufacturer
BARCELONA, Spain, Feb. 14, 2011 /PRNewswire/ -- RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced availability of the Company's RF724x family of HSPA+ power amplifiers. RFMD's RF724x power amplifiers are ultra-high efficiency, single-mode 3G/4G components that reset the bar for performance in smartphones, tablets, and other high-performance data-centric connected devices.
RFMD's RF724x power amplifiers support ultra-high peak efficiency of 48%-51%, significantly above current competitive offerings. Additionally, when combined with one of RFMD's companion DC-DC converters or with chipsets featuring on-chip DC-DC converter functionality, RFMD's RF724x power amplifiers can deliver best-in-class DG.09 performance as low as 13 mA – directly translating into superior 3G talk time. RFMD's RF724x product family is comprised of five PAs covering WCDMA bands 1, 2, 4, 5 and 8, addressing the most common 3G/4G frequency bands and band combinations.
Eric Creviston, president of RFMD's Cellular Products Group (CPG), said, "RFMD's RF724x power amplifiers are specifically designed to reduce the thermal impact of data usage in smartphones while enabling increased battery life during data-based applications like web surfing, video calls and internet radio services. We anticipate significant customer adoption this year, and we expect our first production shipments will commence for a leading North American smartphone manufacturer later this quarter."
All RF724x power amplifiers are packaged in a standardized 3x3 mm footprint, significantly improving smartphone platform flexibility and ease of implementation. RFMD's RF724x power amplifiers also feature an integrated high directivity coupler, standard 2-bit GPIO control logic, and low insertion phase shift between bias states.
RFMD offers a broad portfolio of 3G solutions in single-mode and multimode converged and hybrid architectures to ensure compatibility with leading chipset providers and enable global platform manufacturing.
RF Micro Devices, Inc. (Nasdaq GS: RFMD) is a global leader in the design and manufacture of high-performance semiconductor components. RFMD's products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.
This press release includes "forward-looking statements" within the meaning of the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements include, but are not limited to, statements about our plans, objectives, representations and contentions and are not historical facts and typically are identified by use of terms such as "may," "will," "should," "could," "expect," "plan," "anticipate," "believe," "estimate," "predict," "potential," "continue" and similar words, although some forward-looking statements are expressed differently. You should be aware that the forward-looking statements included herein represent management's current judgment and expectations, but our actual results, events and performance could differ materially from those expressed or implied by forward-looking statements. We do not intend to update any of these forward-looking statements or publicly announce the results of any revisions to these forward-looking statements, other than as is required under the federal securities laws. RF Micro Devices' business is subject to numerous risks and uncertainties, including variability in operating results, risks associated with the impact of global macroeconomic and credit conditions on our business and the business of our suppliers and customers, our reliance on a few large customers for a substantial portion of our revenue, the rate of growth and development of wireless markets, our ability to bring new products to market, our reliance on inclusion in third party reference designs for a portion of our revenue, our ability to manage channel partner and customer relationships, risks associated with the operation of our wafer fabrication, molecular beam epitaxy, assembly and test and tape and reel facilities, our ability to complete acquisitions and integrate acquired companies, including the risk that we may not realize expected synergies from our business combinations, our ability to attract and retain skilled personnel and develop leaders, variability in production yields, raw material costs and availability, our ability to reduce costs and improve margins in response to declining average selling prices, our ability to adjust production capacity in a timely fashion in response to changes in demand for our products, dependence on gallium arsenide (GaAs) for the majority of our products, dependence on third parties, and substantial reliance on international sales and operations. These and other risks and uncertainties, which are described in more detail in RF Micro Devices' most recent Annual Report on Form 10-K and other reports and statements filed with the Securities and Exchange Commission, could cause actual results and developments to be materially different from those expressed or implied by any of these forward-looking statements.
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SOURCE RF Micro Devices, Inc.