BEVERLY, Mass., April 5, 2013 /PRNewswire-iReach/ -- SiOnyx Inc., a rapidly growing innovator in advanced imaging technology, announces the XQE™ family of CMOS image sensors. XQE image sensors deliver unprecedented performance advantages in infrared imaging with sensitivity enhancements as high as 10x incumbent solutions. The SiOnyx XQE family includes three new high performance sensors: the 1.3M pixel XQE-1310, the 1.0M pixel XQE-0920, and the 0.6M pixel XQE-0570. The XQE sensor family is based upon SiOnyx' breakthrough black silicon semiconductor process technology that enhances the sensitivity of silicon based light detectors.
"These new XQE sensors represent a tremendous accomplishment for our sensor team and our company," said Stephen Saylor, President and CEO of SiOnyx. "Since CCD and CMOS sensors were invented decades ago, image sensor development has focused almost entirely on capturing images in the visible spectrum. XQE sensors build upon this foundation of excellence and add a new dimension of extraordinarily high sensitivity in the near infrared spectrum."
Infrared (IR) sensitivity is critical in many existing and emerging mass-market applications including biometrics, eye tracking, natural human interface (i.e. gesture UI) and surveillance. In human interface applications like eye tracking and biometrics, IR sensing has the advantage of operating over a wide variety of lighting conditions without interfering with the user's visual experience. In surveillance, enhanced IR sensitivity takes advantage of the naturally occurring IR 'nightglow' to enable imaging under conditions that normally require very expensive image intensified night vision equipment.
"IR imaging is a fundamental enabler for any man-machine interface," said Dr. Homayoon Haddad, Vice President of Engineering and CTO of SiOnyx. "Applications as diverse as autonomous vehicles and gaming depend on IR light to enable systems to measure, analyze, and adapt to the environment around them."
All sensors in the XQE family share the benefits of ultra-low read noise for extended low light imaging and 72dB of native dynamic range. Additionally, all XQE™ sensors have on-chip HDR features that allow up to 120dB dynamic range capability. XQE sensors are fabricated with a standard CMOS process that offers low power, low dark current, and no sensor cooling requirements. For applications from moonless night sky surveillance (<0.001 Lux) to biometrics and gesture UI, the SiOnyx XQE image sensors will redefine the way IR imaging systems are specified and deployed.
The introductory XQE device family includes:
Device Format Resolution Pixel Size
XQE-1310 1" 1280 x 1024 10 x 10umXQE-0920 1/2" 1280 x 720 5.6 x 5.6umXQE-0570 1/3" 872 x 654 5.6 x 5.6umSiOnyx XQE image sensors are sampling in Q2-2013 to customers interested in evaluating the use of XQE image sensors in next generation imaging platforms.
SiOnyx is commercializing a patented semiconductor process that dramatically enhances the sensitivity of silicon-based photonics. SiOnyx's platform represents a significant breakthrough in the development of smaller, cheaper, high-performing photonic devices in applications ranging from simple light detection to advanced digital imaging, photovoltaics and more. For more information visit us at www.sionyx.com
XQETM is a trademark of SiOnyx Inc.
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SOURCE SiOnyx Inc.