Super Junction MOSFET Business Update
NEW YORK, Feb. 11, 2013 /PRNewswire/ -- Reportlinker.com announces that a new market research report is available in its catalogue:
SJ MOSFET IS JUMPING FROM CONSUMER POWER SUPPLIES TO THE RENEWABLE ENERGY AND INDUSTRY SEGMENTS
It's no secret: Consumer is SJ MOSFET's main application segment, representing 2/3 of its total market. And while some applications are stagnant, i.e. Desktop PC and game console power supplies, most applications are still growing. The biggest growth area will be power supplies for tablets, with an expected 32% increase in CAGR from 2013 to 2018. However, the main products where SJ MOSFETs are used are PC (Desktop and laptop) power supplies and TV sets, which total half of the SJ MOSFET market as presented in this report.
The driver for using SJ MOSFET in these applications is, first and foremost, size reduction. SJ MOSFET allows for a much smaller size than planar MOSFET, since they generate less heat.
The Hybrid and Electric car markets should not be ignored. True, they are less than $5M today, but they will represent more than $100M by 2018.
This report clarifies the situation of SJ MOSFET in EV/HEV markets, and shows how SJ MOSFET will be used in DC/DC converters and chargers and how it provides accurate market metrics.
Industrial applications are less interested in SJ MOSFET use, since these applications do not require a high frequency of switching when operating in an H-bridge. SJ MOSFET is interesting only for specific topologies such as multi-level, or for cheap, low-power solutions (small UPS, residential PV) - but even in these applications, planar MOSFET or IGBTs remain better solutions since they are cheaper and meet all requirements.
DEEP TRENCH/MULTI-EPI: DEEP TRENCH TECHNOLOGY IS IMPROVING, BUT IS STILL TOO EXPENSIVE The technology used for Super Junction MOSFET is of two types. The first one, developed by Infineon, uses a series of epitaxies and doping to create a locally doped "island" in the epi-layer. The doped region then diffuses and creates an N-doped pillar. The second technology uses deep reactive ion etching to dig a trench. This trench is then filled with an N-doped material to create the super junction structure. Players exploiting this particular technology are Toshiba, Fairchild Semiconductor and IceMOS Technology.
Technology evolution is accelerating and the opposition between multiple epitaxy and deep trench is growing stronger. Toshiba released its 4th generation of its DTMOS, a deep trench power MOSFET with a smaller pitch size. It means a smaller die size and an improved RdsON. It's still more expensive to produce than a CoolMOS (Infineon's brand name), but it's becoming more and more competitive.
Compound semiconductor remains a threat to SJ MOSFET. SiC will be positioned at higher voltage and will target high-end solutions as well. Silicon will still be present in 2015. IGBT is the best cost vs. switching efficiency trade-off, and International Rectifier is working on high-speed IGBTs that are competing directly with Super Junction MOSFET. In the end, SJ MOSFET is positioned in-between, and depending on the voltage, application and frequency of switching, it could compete with SiC, Fast IGBT, IGBT or GaN.
This report also presents evolutions in packaging, which has become a part of the game. In 2010, STMicroelectronics and Infineon maintained their leadership role by providing a common package type of very small size. It fits perfectly with consumer applications, where size reduction is a strong driver.
OBJECTIVES OF THE REPORT
The report objectives are as follows:• Analyze new strategies and technology roadmaps• Provide an exhaustive supply-chain analysis of the SJ MOSFET market• Provide up-to-date market metrics• Profile the different segments of the SJ MOSFET market• Position SJ MOSFET technology against current and future competition
TABLE OF CONTENT • Introduction p.2
> How is this report built?
• Executive summary p.9
• Power electronics market p.28 • Super Junction MOSFET market p.35• Applications for Super Junction MOSFETs p.55 > Synthesis on Super Junction MOS applications
- Super Junction MOS drivers by segment
- Split by application as of 2012
- Super Junction MOS market forecast to 2008
> Super Junction MOS in PV inverter p.72
> Super Junction MOS in Uninterruptible Power Supplies (UPS) p.79
> Super Junction MOS in LCD TV p.84
> Super Junction MOS in lighting applications p.87
> Super Junction MOS in desktop power supplies p.92
> Super Junction MOS in servers p.95
> Super Junction MOS in SMPS for consumer applications p.97
> Super Junction MOS in EV/HEV & EV/HEV supply equipment p.112
> Super Junction MOS in other power supplies: p.126
• Super Junction MOSFET technologies p.131 > History> Two technologies:
- Multiple epitaxy technology- Deep trench technology
> Cost analysis> Performances history at R&D> Who does what?
• SJ MOSFET packaging: p.145 > History> PowerFLAT and ThinPAK> Power Modules• Trends in the Super Junction MOSFET market p.153 > Towards higher voltage
> The competing technologies against Super Junction MOSFET
• Added value of Super Junction MOS p.163 > Conventional power MOSFET> The Super Junction principle> Features and benefits> Si, Super Junction MOS and SiC - characteristics comparison> Super Junction MOSFET position in voltage and frequency• Player Profiles p.172 > Recall on market share by player> Players profile analysis> Focus on new players• Conclusion p.189 • Yole Développement Contacts • APPENDIX • Reverse engineering on Super Junction MOS To order this report:Clean_Vehicle Industry: Super Junction MOSFET Business Update
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