2014

Toshiba Announces Family of Ultra-Efficient, High-Speed, Low Voltage MOSFETs for Synchronous Rectification in Switch Mode Power Supplies Eighth Generation Process Delivers Industry-Leading Reduction of On Resistance and Input Capacitance

ORLANDO, Fla., Feb. 6, 2012 /PRNewswire/ -- Toshiba America Electronic Components, Inc., (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, today announced a new family of ultra-high-efficiency, high-speed MOSFETs that deliver significant improvements in trade-off characteristics between low on resistance (RDS(ON)) and low input capacitance (C(iss)). The new trench MOSFET series will have voltage ratings from 60V to 120V and will allow designers to reduce the size and improve the efficiency and performance of secondary synchronous rectification in switch mode power supplies.

Use of Toshiba's eighth generation N-channel U-MOSVIII-H process has allowed the company to reduce the R(DS(ON)) * C(iss) 'figure of merit' compared to previous generations by up to 42 percent. This improves overall efficiency by driving down both conduction and drive losses at the same time as significantly improving switching speeds. The new process technology also helps to minimize radiated noise.

Among the first devices to be launched in the new family are the TK100E08N1 and TK100E10N1 in TO-220 packages and the TK100A08N1 and TK100A10N1 in TO-220SIS smart isolation package formats. These best-in-class devices have V(DSS) voltage ratings of 80V (TK100E08N1 and TK100A08N1) and 100V (TK100E10N1 and TK100A10N1). Target applications range from AC/DC adapters and industrial equipment to servers and telecom power designs.

For the TK100*08 MOSFETs, typical R(DS(ON)) (@ V(GS) = 10V) is rated at 2.6m Omega and typical C(iss) is just 9100pF. In the case of the TK100*10 devices, R(DS(ON)) (@ V(GS) = 10V) is 2.8m Omega for the TO-220 package and 3.2m Omega for the TO-220SIS package. For both MOSFETs, typical C(iss) is only 8800pF.

Toshiba's full range of 80V and 100V MOSFETs based on the U-MOSVIII-H process features 18 devices offering a range of R(DS(ON)) * C(iss) ratings to match the needs of a broad variety of synchronous rectification applications. In the coming months, Toshiba will launch a number of additional 60V and 120V devices based on the same technology.

Availability
Samples of these latest additions to the Toshiba MOSFETs lineup are available now, with mass production beginning to ramp.

Technical Specifications for Toshiba UMOS VIII-H MOSFETs for DC-DC Converters
80V and 100V through-hole products

Part Number

Polarity

V(DSS) (V)

Package

R(DS(ON)) (mW) @ V(GS)=10V

C(iss)

(pF)

C(oss)

(pF)

C(rss)

(pF)

Process

@ V(DS)=10V, f=MHz

typ.

max.

typ.

typ.

typ.

TK100E08N1

N-Channel

80

TO-220

2.6

3.2

9100

2400

40

UMOS VIII-H

TK100A08N1

N-Channel

TO-220

2.6

3.2

9100

2400

40

UMOS VIII-H

TK100E10N1

N-Channel

100

TO-220

2.8

3.4

8800

1600

20

UMOS VIII-H

TK100A10N1

N-Channel

TO-220SIS

3.2

3.9

8800

1600

20

UMOS VIII-H

Toshiba's Discrete Products
Toshiba is a leading supplier in a number of discrete product categories, including power transistors, rectifiers and thyristors, LMOS logic, CMOS logic, photocouplers, Toslinks, LEDs, small signal diodes and transistors.  The company's discrete devices are designed to meet the growing demand for high-performance and lower voltages in today's wireless telecommunications and consumer electronics applications, while emphasizing its strength in the automotive and industrial markets.

*About Toshiba Corp. and TAEC
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs.  Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, VARs, distributors and fabless chip companies worldwide.  A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, solid state drives (SSDs), hard disk drives (HDDs), discrete devices, LCD displays, advanced materials, medical tubes, custom SoCs/ASICs, imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics, enterprise solutions and more.

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's third largest semiconductor manufacturer (Gartner, 2010 WW Semiconductor Revenue, April 2011). Toshiba was founded in 1875 and today has over 490 subsidiaries and affiliates, with 203,000 employees worldwide and annual sales of $77 billion. Visit Toshiba's web site at www.toshiba.co.jp/index.htm.

© 2011 Toshiba America Electronic Components, Inc. All rights reserved.
Information in this press release, including product pricing and specifications, content of services and contact information,  is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice.  Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.

MEDIA CONTACT:
Dena Jacobson
Lages & Associates
Tel.: (949) 453-8080
dena@lages.com

NOTE TO EDITORS: Images available for download from: http://www.toshiba.com/taec/news/press_releases/2012/powr_12_627.jsp

 

SOURCE Toshiba America Electronic Components, Inc.



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