Toshiba Introduces 40V/45V N-Channel Power MOSFETs with Industry-Leading Low On-Resistance

Expands Lineup of Low-Voltage U-MOS IX-H Series MOSFETs

10 May, 2017, 10:00 ET from Toshiba America Electronic Components, Inc.

IRVINE, Calif., May 10, 2017 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC)* has expanded its U-MOS IX-H Series of low-voltage N-channel power MOSFETs with the addition of new 40V and 45V products. Delivering high-speed performance and industry-leading[1] low on-resistance, the new MOSFETs are designed for industrial and consumer applications, including high-efficiency DC-DC converters, high-efficiency AC-DC converters, power supplies, and motor drives.

The new MOSFETs utilize Toshiba's latest generation low-voltage trench structure U-MOS IX-H process to lower the performance index for "RDS(ON) * Qsw"[2] figure of merit, improving switching applications to a level that surpasses other offerings[3]. Output loss is improved by the reduction of output charge, which can contribute to higher set efficiency. Additionally, the cell structures used in the new MOSFETs are optimized to suppress spike voltage and ringing during switching, which can contribute to lowering set EMI.

Toshiba's U-MOS IX-H Series is specifically designed for synchronous rectification applications, including the secondary side of isolated switching power supplies. It provides an improved Qoss[4] performance, which is one of the main causes of power loss of synchronous rectification. The U-MOS IX-H Series also provides a low Ron•Qoss, the trade-off characteristics between on-resistance and Qoss. Since Ron has a significant impact on Qoss, Toshiba will extend the U-MOS IX-H portfolio to include MOSFETs having ultra-low Ron in order to supplement its U-MOS VIII-H Series of MOSFETs.

Features                                                        

  • Low on-resistance
  • Low output charge
  • High-speed performance
  • Low switching noise
  • Supports 4.5V logic level drive

Main Specifications
(Unless otherwise specified, @Ta=25°C)

Part number

Polarity

Absolute

maximum ratings

 

Drain-source

On-
resistance

RDS(ON)  max

(mΩ)

Total

gate

charge

Qg

typ.

(nC)

 

Output

charge

Qoss

typ.

(nC)

 

Gate

switch

charge

QSW

typ.

(nC)

 

Input

capacitance

Ciss

typ.

(pF)

 

Package

Drain-

source

voltage

VDSS

(V)

 

Drain

current

(DC)

ID

@TC=25°C

(A)

 

@VGS

=10 V

@VGS

=4.5 V

TPH7R204PL*4

N-ch

40

48

7.2

9.7

24

16

6.9

1570

SOP Advance

TPH6R004PL*4

49

6.0

8.4

30

20

9

2100

SOP Advance

TPH3R704PC*4

82

3.7

5.8

47

28

14

2780

SOP Advance

TPH2R104PL*4

100

2.1

3.1

78

46

21

4790

SOP Advance

TPHR8504PL*4

150

0.85

1.4

103

85.4

23

7370

SOP Advance

TPN7R504PL*4

38

7.5

10

24

16

6.9

1570

TSON Advance

TK3R1E04PL*4

100

3.1

3.8

63.4

42

17.5

4670

TO-220

TK3R1A04PL*4

82

3.1

3.8

63.4

42

17.5

4670

TO-220SIS

TPWR8004PL*4

150

0.80

1.35

103

85.4

23

7370

DSOP Advance

TPN3R704PL

80

3.7

6.0

27

20.2

8.1

1910

TSON Advance

TPN2R304PL

80

2.3

4.0

41

27

10.8

2750

TSON Advance

TPH3R704PL

92

3.7

6.0

27

20.2

8.1

1910

SOP Advance

TPH1R204PL

150

1.24

2.1

74

56

17

5500

SOP Advance

TPH2R805PL*4

45

100

2.8

3.9

73

55

22

3980

SOP Advance

TPH1R405PL*4

120

1.4

2.3

74

67

22

4830

SOP Advance

TPH1R005PL*4

150

1.04

1.7

122

98

34

7700

SOP Advance

TPN2R805PL*4

80

2.8

5.0

39

32

12

2450

TSON Advance

TPW1R005PL*4

150

0.99

1.65

122

98

34

7700

DSOP Advance

Pricing and Availability
The new MOSFETs are available now. For more details, samples and pricing information, please contact your local Toshiba Sales Office.

Notes
[1] In the category of products with the same ratings, as of December 9, 2016. Toshiba survey.
[2] RDS(ON): Drain-source on-resistance
     Qsw: Gate switch charge
[3] Toshiba products using the previous generation U-MOS VIII-H process
[4] Qoss: Output charge (drain-source charge)

*About TAEC
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, VARs, distributors and fabless chip companies worldwide.  A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, solid state drives (SSDs), hard disk drives (HDDs), solid state hybrid drives (SSHDs), discrete devices, custom SoCs/ASICs, imaging products, microcontrollers, wireless components, mobile peripheral devices, and advanced materials that make possible today's leading smartphones, tablets, cameras, medical devices, automotive electronics, industrial applications, enterprise solutions and more.

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor, solid state drive and hard disk drive manufacturer and the world's seventh largest semiconductor manufacturer (Gartner, 2015 Worldwide Semiconductor Revenue, January, 2016). Founded in Tokyo in 1875, Toshiba is at the heart of a global network of over 550 consolidated companies employing over 188,000 people worldwide (as of March 31, 2016). Visit Toshiba's web site at http://toshiba.semicon-storage.com.

Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.

MEDIA CONTACT:
Dena Jacobson
Lages & Associates
Tel.: (949) 453-8080
dena@lages.com

 

SOURCE Toshiba America Electronic Components, Inc.



RELATED LINKS

http://www.toshiba.com/taec