Ultratech Introduces New Laser Spike Anneal Products With Novel, Proprietary Dual-Beam Technology Ultratech Expands its Application Space with Two New Dual-Beam LSA Products
SAN JOSE, Calif., Oct. 22, 2012 /PRNewswire/ -- Ultratech, Inc. (Nasdaq: UTEK), a leading supplier of lithography and laser-processing systems used to manufacture semiconductor devices and high-brightness LEDs (HB-LEDs), today announced that it has introduced two new laser spike anneal (LSA) products based on its proprietary dual-beam laser technology, which enables expanded processing capabilities compared to conventional millisecond annealing tools. Both new products are based on Ultratech's flagship platform, the LSA101, which is currently in high-volume production for 40- and 28-nm logic devices. The LSA101LP features a second low-power (LP) laser beam to enable low-temperature processing required for middle-of-line (MOL) applications. Multiple LSA101LP systems have already been delivered to several logic foundries, and are inserted into 20-nm baseline processes. The second dual-beam system, the LSA101HP, features a second high-power (HP) laser which enables longer dwell times required for some advanced front-end-of–line (FEOL) applications. The LSA101HP is scheduled to be delivered to several logic foundries in the first half of 2013. Both dual-beam systems are field upgradable on the LSA101 platform.
In the LSA101 system, a single CO2 laser beam is used to heat the wafer surface from a substrate temperature of approximately 400C to the peak annealing temperature in the range 1100-1350C. In the LSA101LP system, a second low-power laser beam is incorporated to preheat the wafer, which enables the lower substrate temperatures required for MOL processes, such as nickel silicide formation. In addition, a new temperature measurement and control system has been developed to enable the lower peak temperatures required for these processes. For leading-edge logic nodes, the short time scale of millisecond annealing has been shown to minimize nickel silicide diffusion and leakage-related yield loss. For MOL applications, the maximum throughput of the system is an industry-leading 70wph. Compared to competing laser annealing systems, the LSA101LP offers superior within-die uniformity for different layouts due to its long-wavelength source, industry-leading process control due to its full-wafer closed loop temperature control, and a significantly lower cost of ownership due to higher throughput and low cost of consumables.
For the LSA101 system, the primary CO2 beam is relatively narrow so that it generates dwell times on the order of 100s of microseconds. In Ultratech's LSA101HP system, the second high-power laser creates a longer dwell time anneal on the order of 10msec. The combination of these two lasers leads to a unique temperature profile, which is comprised of a long dwell and short dwell anneal in a single process. There are numerous applications that can benefit from this kind of temperature profile, such as annealing end-of-range implant damage with minimal dopant diffusion. This application has the potential of replacing conventional rapid thermal processing (RTP) for junction activation in advanced logic nodes, where small devices cannot tolerate the dopant diffusion caused by the longer annealing times of RTP.
"The introduction of these two dual-beam products that enable many new applications for sub-28nm devices confirms that Ultratech's LSA101 platform delivers high flexibility and extendibility for advanced annealing applications," noted Jeff Hebb, Ph.D., vice president of laser product marketing at Ultratech. "Building on the applications served by the single beam LSA101, the lower temperatures and longer dwell times provided by these two new products greatly expands the application space in the FEOL and the MOL. These new capabilities are both easily field upgradable, which provides significant cost and technology advantages to our customers because they will not have to change the entire platform to gain access to new applications. The introduction of these two new systems is an example of Ultratech's commitment to providing advanced technology in a low-risk, low-cost solution to meet the aggressive product roadmaps of its global customers."
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About Ultratech: Ultratech, Inc. (Nasdaq: UTEK) designs, manufactures and markets photolithography and laser processing equipment. Founded in 1979, the company's market-leading advanced lithography products deliver high throughput and production yields at a low, overall cost of ownership for bump packaging of integrated circuits and high-brightness LEDs (HB-LEDs). A pioneer of laser processing, Ultratech developed laser spike anneal technology, which increases device yield, improves transistor performance and enables the progression of Moore's Law for 32-nm and below production of state-of-the-art consumer electronics. Visit Ultratech online at: www.ultratech.com.
SOURCE Ultratech, Inc.