"Raytheon's storied track record of innovation in applied radar technologies uniquely positions us to play a critical role in the development of the U.S. Army's Next Generation Radar system," said Colin Whelan, Raytheon's vice president of Advanced Technology. "With the [United States] Army Research Lab, our team will leverage Raytheon's deep investment and unmatched expertise as a pioneer in gallium nitride technology to dramatically improve radar capabilities and keep the Army ahead of its adversaries for many years to come."
The company's efforts to mature GaN for military production earned Raytheon the highest OSD-rated manufacturing readiness level of any organization in the defense industry. A semiconductor material that can efficiently amplify high power signals at microwave frequencies, GaN enables radars to operate up to five times more powerfully than they would with older semiconductor technology, and without overheating. Raytheon GaN components generate RF at 1/3 the cost per watt compared to gallium arsenide alternatives, deliver higher power density and efficiency, and have demonstrated mean time between failures at an impressive 100 million hours. This will enable Next Generation Radar to efficiently and affordably provide much higher performance.
Raytheon Company, with 2015 sales of $23 billion and 61,000 employees, is a technology and innovation leader specializing in defense, civil government and cybersecurity solutions. With a history of innovation spanning 94 years, Raytheon provides state-of-the-art electronics, mission systems integration, C5I™ products and services, sensing, effects, and mission support for customers in more than 80 countries. Raytheon is headquartered in Waltham, Massachusetts. Follow us on Twitter @Raytheon.
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SOURCE Raytheon Company